Images à titre indicatif uniquement
IPG20N06S4L14ATMA2
+NomenclatureMOSFET 2N-CH 60V 20A 8TDSON
-
FabricantTechnologie Infineon
-
Pièce fabricant #IPG20N06S4L14ATMA2
-
Fiche technique IPG20N06S4L14ATMA2 DataSheet
-
Package VDFN-8
-
En stock8385
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Bulk |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain(Id) @ 25°C | 20A |
| Rds On(Max) @ Id Vgs | 13.7mOhm @ 17A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 20µA |
| Gate Charge(Qg)(Max) @ Vgs | 39nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 2890pF @ 25V |
| Power - Max | 50W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
