Images à titre indicatif uniquement
IPG20N06S415ATMA1
+NomenclatureMOSFET 2N-CH 60V 20A 8TDSON
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FabricantTechnologie Infineon
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Pièce fabricant #IPG20N06S415ATMA1
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Fiche technique IPG20N06S415ATMA1 DataSheet
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Package VDFN-8
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En stock3613
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Bulk |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| ProductStatus | Discontinued at Digi-Key |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 20A |
| RdsOn(Max)@IdVgs | 15.5mOhm @ 17A, 10V |
| Vgs(th)(Max)@Id | 4V @ 20µA |
| GateCharge(Qg)(Max)@Vgs | 29nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 2260pF @ 25V |
| Power-Max | 50W |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-PowerVDFN |
