Images à titre indicatif uniquement
IPG20N06S2L50AATMA1
+NomenclatureMOSFET 2N-CH 55V 20A 8TDSON
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FabricantTechnologie Infineon
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Pièce fabricant #IPG20N06S2L50AATMA1
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Package VDFN-8
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En stock6087
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
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Spécifications
| Attribut | Valeur |
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Bulk |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain(Id) @ 25°C | 20A |
| Rds On(Max) @ Id Vgs | 50mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 19µA |
| Gate Charge(Qg)(Max) @ Vgs | 17nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 560pF @ 25V |
| Power - Max | 51W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount, Wettable Flank |
