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IPD75N04S4-06
+NomenclatureIPD75N04 - 20V-40V N-CHANNEL AUT
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FabricantTechnologie Infineon
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Pièce fabricant #IPD75N04S4-06
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En stock26611
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Spécifications
| Attribut | Valeur |
| Supplier | Rochester Electronics, LLC |
| Package | Bulk |
| Series | OptiMOS™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 75A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 5.9mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 26µA |
| GateCharge(Qg)(Max)@Vgs | 32 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2550 pF @ 25 V |
| PowerDissipation(Max) | 58W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-TO252-3-313 |
Présentation
Description
The IPD75N04S4-06 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used for electronic switching and amplification. It is part of the OptiMOS™ series, which is known for high efficiency and performance in power management applications. This particular model is designed to handle a maximum voltage of 40V and a continuous drain current of up to 75A, making it suitable for high-power applications.
Key features of the IPD75N04S4-06 include a low RDS(on) value, which minimizes conduction losses, and fast switching capabilities, which increase efficiency in switching applications. Its compact TO-252 package allows for efficient heat dissipation and space-saving in circuit designs. This MOSFET is commonly used in automotive, industrial, and consumer electronics where energy efficiency and reliability are critical. Additionally, it offers robustness against over-voltage and high thermal performance, making it a reliable choice for designers looking to optimize power systems.
Key features of the IPD75N04S4-06 include a low RDS(on) value, which minimizes conduction losses, and fast switching capabilities, which increase efficiency in switching applications. Its compact TO-252 package allows for efficient heat dissipation and space-saving in circuit designs. This MOSFET is commonly used in automotive, industrial, and consumer electronics where energy efficiency and reliability are critical. Additionally, it offers robustness against over-voltage and high thermal performance, making it a reliable choice for designers looking to optimize power systems.
Equivalent
The IPD75N04S4-06 is a MOSFET produced by Infineon Technologies. Equivalent products should have similar specifications: N-channel MOSFET, 40V Vds, 75A Id, low Rds(on), and fast switching. Possible equivalents include:
1. IRF3205 (by Infineon/IR)
2. FDB7045L (by ON Semiconductor)
3. STP75NF75 (by STMicroelectronics)
4. AUIRF3205 (by Infineon/IR for automotive use)
Always verify the specifications and pin configurations before substitution.
1. IRF3205 (by Infineon/IR)
2. FDB7045L (by ON Semiconductor)
3. STP75NF75 (by STMicroelectronics)
4. AUIRF3205 (by Infineon/IR for automotive use)
Always verify the specifications and pin configurations before substitution.
Features
The IPD75N04S4-06 is a power MOSFET known for its efficiency and reliability in high-performance applications. Key features include:
1. Voltage and Current Ratings: Designed for a maximum drain-source voltage of 40V and a continuous drain current of up to 75A, making it suitable for high-power applications.
2. Low On-Resistance: Offers a low on-state resistance (RDS(on)), ensuring minimal power loss and high efficiency in operation.
3. Fast Switching: Features rapid switching capabilities, reducing switching losses and improving performance in high-frequency applications.
4. Thermal Performance: Equipped with excellent thermal characteristics to handle significant power loads while maintaining stability.
5. Rugged Design: Built to withstand high current and voltage stresses, enhancing durability and longevity under demanding conditions.
6. Package Type: Available in a TO-252 package, which is compact and allows for efficient heat dissipation.
These attributes make the IPD75N04S4-06 suitable for applications in automotive, industrial, and consumer electronics where high efficiency and reliability are critical.
1. Voltage and Current Ratings: Designed for a maximum drain-source voltage of 40V and a continuous drain current of up to 75A, making it suitable for high-power applications.
2. Low On-Resistance: Offers a low on-state resistance (RDS(on)), ensuring minimal power loss and high efficiency in operation.
3. Fast Switching: Features rapid switching capabilities, reducing switching losses and improving performance in high-frequency applications.
4. Thermal Performance: Equipped with excellent thermal characteristics to handle significant power loads while maintaining stability.
5. Rugged Design: Built to withstand high current and voltage stresses, enhancing durability and longevity under demanding conditions.
6. Package Type: Available in a TO-252 package, which is compact and allows for efficient heat dissipation.
These attributes make the IPD75N04S4-06 suitable for applications in automotive, industrial, and consumer electronics where high efficiency and reliability are critical.
Pinout
The IPD75N04S4-06 is a power MOSFET produced by Infineon Technologies. It typically comes in a TO-252 (DPAK) package, which is a surface-mount package featuring three pins. The pin configuration for the IPD75N04S4-06 is as follows:
1. Gate (G): Used to control the MOSFET by applying a voltage that regulates the flow of current between the drain and source.
2. Drain (D): The terminal through which the main current flows from the MOSFET when it is in the 'on' state.
3. Source (S): The terminal that serves as the reference point for the current flowing through the drain.
The IPD75N04S4-06 is typically used in applications requiring efficient power switching, including power management, motor controls, and DC-DC converters. Its specific performance characteristics, such as on-resistance and voltage ratings, make it suitable for high-efficiency and high-speed switching applications. For precise operating limits and electrical characteristics, consult its datasheet.
1. Gate (G): Used to control the MOSFET by applying a voltage that regulates the flow of current between the drain and source.
2. Drain (D): The terminal through which the main current flows from the MOSFET when it is in the 'on' state.
3. Source (S): The terminal that serves as the reference point for the current flowing through the drain.
The IPD75N04S4-06 is typically used in applications requiring efficient power switching, including power management, motor controls, and DC-DC converters. Its specific performance characteristics, such as on-resistance and voltage ratings, make it suitable for high-efficiency and high-speed switching applications. For precise operating limits and electrical characteristics, consult its datasheet.
Manufacturer
The IPD75N04S4-06 is manufactured by Infineon Technologies. Infineon is a German company that specializes in semiconductor solutions. It is one of the leading semiconductor manufacturers in the world, known for producing a wide range of electronic components used in various applications, including automotive, industrial power control, power management, and digital security solutions. Infineon's products are integral to modern electronic systems, providing essential functionalities such as power efficiency, connectivity, and security.
Application
The IPD75N04S4-06 is a N-channel MOSFET commonly used in applications requiring high efficiency and fast switching. Key areas include:
1. Power Management: Efficient for use in DC-DC converters and voltage regulation in power supplies.
2. Automotive Systems: Suitable for electric motor control, battery management systems, and various power distribution modules.
3. Switching Applications: Utilized in load switches and relay replacement due to its fast switching characteristics.
4. Industrial Equipment: Applied in motor drives and other industrial automation systems that require reliable power handling.
5. Consumer Electronics: Ideal for power management in devices like laptops and power adapters.
Its high current capacity and low on-resistance make it versatile for both high and low voltage applications.
1. Power Management: Efficient for use in DC-DC converters and voltage regulation in power supplies.
2. Automotive Systems: Suitable for electric motor control, battery management systems, and various power distribution modules.
3. Switching Applications: Utilized in load switches and relay replacement due to its fast switching characteristics.
4. Industrial Equipment: Applied in motor drives and other industrial automation systems that require reliable power handling.
5. Consumer Electronics: Ideal for power management in devices like laptops and power adapters.
Its high current capacity and low on-resistance make it versatile for both high and low voltage applications.
Package
The IPD75N04S4-06 is a power MOSFET, and it typically comes in a TO-252 package, also known as DPAK. This package type is designed for surface mounting on a circuit board and is commonly used for high power applications due to its efficient heat dissipation capabilities.
