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GD25LQ40EEIGR
+NomenclatureIC FLASH 4MBIT SPI/QUAD 8USON
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FabricantGigadevice Semiconductor (Hong Kong) Co., Ltd
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Pièce fabricant #GD25LQ40EEIGR
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En stock28711
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Spécifications
| Attribut | Valeur |
| Series | GD25LQ |
| Part Status | Active |
| Base Product Number | GD25LQ40 |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR (SLC) |
| Memory Size | 4Mbit |
| Memory Organization | 512K x 8 |
| Memory Interface | SPI - Quad I/O |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word, Page | 60µs, 2.4ms |
| Voltage - Supply | 1.65V ~ 2V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 8-XFDFN Exposed Pad |
| Supplier Device Package | 8-USON (3x2) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
| Access Time | 6 ns |
Présentation
Description
GD25LQ40EEIGR is a GigaDevice 4-Mbit serial (SPI) flash memory. It’s used to store code or data in embedded systems.
Key points:
- Capacity: 4 Mbit (512 KB) non-volatile flash.
- Interface: Serial SPI (classic mode; some variants also support Quad I/O for higher throughput).
- Addressing: 3-byte addressing (typical for ≤ 8 Mbit devices).
- Pages/sectors: 256-byte pages; erase blocks of 4K/32K/64K; chip erase supported.
- Voltage: operates on a single supply around 2.7–3.6 V.
- Features: Write Enable Latch, status/config registers, block protection, deep power-down, wake/auto‑sleep modes.
- Package/grade: 8-pin package; suffix indicates RoHS-compliant packaging and temperature grade (industrial/extended), as per datasheet.
Applications: boot memory, configuration storage, data logging in microcontroller systems. For exact electrical characteristics, timing, and package details, consult the GD25LQ40E datasheet corresponding to the -GR variant.
Key points:
- Capacity: 4 Mbit (512 KB) non-volatile flash.
- Interface: Serial SPI (classic mode; some variants also support Quad I/O for higher throughput).
- Addressing: 3-byte addressing (typical for ≤ 8 Mbit devices).
- Pages/sectors: 256-byte pages; erase blocks of 4K/32K/64K; chip erase supported.
- Voltage: operates on a single supply around 2.7–3.6 V.
- Features: Write Enable Latch, status/config registers, block protection, deep power-down, wake/auto‑sleep modes.
- Package/grade: 8-pin package; suffix indicates RoHS-compliant packaging and temperature grade (industrial/extended), as per datasheet.
Applications: boot memory, configuration storage, data logging in microcontroller systems. For exact electrical characteristics, timing, and package details, consult the GD25LQ40E datasheet corresponding to the -GR variant.
Equivalent
Equivalent 4M-bit SPI flash devices from other vendors include:
- Winbond W25Q40BV / W25Q40CL
- Macronix MX25LQ40ABZDI-10
- Spansion S25FL040A
- ISSI IS25LP040D
- Microchip/Atmel AT25DF041A
- Winbond W25Q40BV / W25Q40CL
- Macronix MX25LQ40ABZDI-10
- Spansion S25FL040A
- ISSI IS25LP040D
- Microchip/Atmel AT25DF041A
Features
Key features of GD25LQ40EEIGR:
- Density: 40 Mbit serial flash memory
- Interface: Quad SPI with support for single, dual, and quad I/O (QPI) modes
- Performance: fast read and high-throughput options via QPI
- Memory organization: 256-byte page program; sectors/blocks (e.g., 4 KB sectors, 64 KB blocks); full-chip erase
- Voltage: 2.7–3.6 V operation
- Temperature: -40 °C to 85 °C (industrial grade)
- Power management: deep power-down mode for low current consumption
- Endurance/retention: typical high P/E cycles with long data retention
- Security/protection: status register with write protection options (block protection)
- Packaging: 8-pin small-outline package (8-SOP), RoHS-compliant
Note: exact endurance, retention figures and clock speeds are device-specific; refer to the datasheet for precise numbers.
- Density: 40 Mbit serial flash memory
- Interface: Quad SPI with support for single, dual, and quad I/O (QPI) modes
- Performance: fast read and high-throughput options via QPI
- Memory organization: 256-byte page program; sectors/blocks (e.g., 4 KB sectors, 64 KB blocks); full-chip erase
- Voltage: 2.7–3.6 V operation
- Temperature: -40 °C to 85 °C (industrial grade)
- Power management: deep power-down mode for low current consumption
- Endurance/retention: typical high P/E cycles with long data retention
- Security/protection: status register with write protection options (block protection)
- Packaging: 8-pin small-outline package (8-SOP), RoHS-compliant
Note: exact endurance, retention figures and clock speeds are device-specific; refer to the datasheet for precise numbers.
Pinout
- Pin count: 8 pins (SO8 package)
- Function: 40 Mbit SPI serial flash memory (non-volatile storage for firmware/data; supports read, write/erase via SPI).
- Function: 40 Mbit SPI serial flash memory (non-volatile storage for firmware/data; supports read, write/erase via SPI).
Manufacturer
- Manufacturer: GigaDevice Semiconductor Inc. (GD)
- What kind of company: A Beijing-based fabless semiconductor company that designs and markets memory products, especially serial (SPI) flash memory and other storage solutions.
- What kind of company: A Beijing-based fabless semiconductor company that designs and markets memory products, especially serial (SPI) flash memory and other storage solutions.
Application
Applications of GD25LQ40EEIGR (4 Mbit serial flash) include:
- MCU boot flash and firmware storage
- Embedded systems code storage and data storage (IoT, consumer electronics, industrial)
- In-field firmware updates, recovery, and bootloaders
- Calibration data, configuration tables, and look-up tables
- Small data logging and parameter storage in automotive and other edge devices
- MCU boot flash and firmware storage
- Embedded systems code storage and data storage (IoT, consumer electronics, industrial)
- In-field firmware updates, recovery, and bootloaders
- Calibration data, configuration tables, and look-up tables
- Small data logging and parameter storage in automotive and other edge devices
Package
An 8‑pin SOP package (SOIC), RoHS-compliant.
