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G5S06506QT
+NomenclatureSIC SCHOTTKY DIODE 650V 6A DFN8*
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FabricantUniversal Power Technology Co., Ltd
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Pièce fabricant #G5S06506QT
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Fiche technique G5S06506QT DataSheet
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Package TSFN-4
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En stock5539
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
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Spécifications
| Attribut | Valeur |
| Supplier | Global Power Technology Co. Ltd |
| Package / Case | Bulk |
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified(Io) | 34A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 6 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Capacitance @ Vr F | 395pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-DFN (8x8) |
