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G3S12002C
+NomenclatureSIC SCHOTTKY DIODE 1200V 2A 2-PI
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FabricantUniversal Power Technology Co., Ltd
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Pièce fabricant #G3S12002C
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En stock4386
365 Garantie qualité 24h/24
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Spécifications
| Attribut | Valeur |
| Supplier | Global Power Technology Co. Ltd |
| Package | Bulk |
| ProductStatus | Active |
| DiodeType | Silicon Carbide Schottky |
| Voltage-DCReverse(Vr)(Max) | 1200 V |
| Current-AverageRectified(Io) | 8.8A (DC) |
| Voltage-Forward(Vf)(Max)@If | 1.7 V @ 2 A |
| Speed | No Recovery Time > 500mA (Io) |
| ReverseRecoveryTime(trr) | 0 ns |
| Current-ReverseLeakage@Vr | 50 µA @ 1200 V |
| Capacitance@VrF | 170pF @ 0V, 1MHz |
| MountingType | Surface Mount |
| Package/Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| SupplierDevicePackage | TO-252 |
