Images à titre indicatif uniquement
G4S12010PM
+NomenclatureSIC SCHOTTKY DIODE 1200V 10A 2-P
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FabricantUniversal Power Technology Co., Ltd
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Pièce fabricant #G4S12010PM
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Fiche technique G4S12010PM DataSheet
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Package TO-247-2
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En stock9983
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Global Power Technology Co. Ltd |
| Package / Case | Bulk |
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified(Io) | 33.2A (DC) |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
