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G4S06508JT
+NomenclatureSIC SCHOTTKY DIODE 650V 8A 2-PIN
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FabricantGPT pour Global Power Technology
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Pièce fabricant #G4S06508JT
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Fiche technique G4S06508JT DataSheet
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Package TO-220-2 Isolated Tab
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En stock5474
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Spécifications
| Attribut | Valeur |
| Supplier | Global Power Technology-GPT |
| Package | Cut Tape (CT),Tape & Box (TB) |
| ProductStatus | Active |
| DiodeType | Silicon Carbide Schottky |
| Voltage-DCReverse(Vr)(Max) | 650 V |
| Current-AverageRectified(Io) | 23.5A (DC) |
| Voltage-Forward(Vf)(Max)@If | 1.7 V @ 8 A |
| Speed | No Recovery Time > 500mA (Io) |
| ReverseRecoveryTime(trr) | 0 ns |
| Current-ReverseLeakage@Vr | 50 µA @ 650 V |
| Capacitance@VrF | 395pF @ 0V, 1MHz |
| MountingType | Through Hole |
| Package/Case | TO-220-2 Isolated Tab |
| SupplierDevicePackage | TO-220ISO |
