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FDS6680A
+NomenclatureMOSFET N-CH 30V 12.5A 8SOIC
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FabricantSemi - conducteurs
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Pièce fabricant #FDS6680A
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Package SOIC-8
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En stock5816
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 12.5A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 9.5mOhm @ 12.5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 23 nC @ 5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1620 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SOIC |
Présentation
Description
FDS6680A is designed to provide a foundational understanding of key principles and methodologies within its specified field. It typically covers essential theories, tools, and techniques that are critical for advanced study or professional practice. Students can expect to engage with both theoretical concepts and practical applications, often through a mix of lectures, hands-on projects, and collaborative work.
The course may also include an overview of the latest trends and technologies impacting the field, preparing students to address real-world challenges. Assessment methods could involve exams, projects, and presentations to evaluate comprehension and application skills. For specific details about the course content, prerequisites, and objectives, refer to the relevant academic institution's syllabus or course catalog.
Equivalent
1. IRF7401 from Infineon Technologies
2. SI4410DY from Vishay
3. DMN2075U from Diodes Incorporated
4. AO4620 from Alpha & Omega Semiconductor
Ensure to compare the datasheets for specific parameters to verify compatibility, such as voltage, current ratings, Rds(on), and package type.
Features
1. N-Channel MOSFET: It is an N-channel enhancement-mode power MOSFET, suitable for high-speed switching applications.
2. Low On-Resistance: The FDS6680A features a low on-resistance, which improves efficiency by reducing power loss during operation.
3. Fast Switching Speed: It offers fast switching capabilities, making it ideal for applications requiring quick response times.
4. SO-8 Package: The device is available in a compact SO-8 package, which is suitable for surface-mount applications, saving space on circuit boards.
5. High Current and Voltage Ratings: It can handle high current and voltage, enabling its use in demanding power supply and motor control applications.
6. Thermal Performance: The device is designed to dissipate heat efficiently, reducing thermal stress and enhancing reliability.
These features make the FDS6680A a versatile choice for various electronic applications, including power management, load switching, and motor control.
Pinout
1. Drain (D): The drain is the terminal through which the main current flows from the source when the MOSFET is on. In the standard SO-8 package, multiple pins (often 2 to 4) are connected to the drain to handle higher current.
2. Gate (G): The gate is the control terminal of the MOSFET. A voltage applied to the gate controls the flow of current between the drain and source.
3. Source (S): The source is the terminal through which the main current leaves the MOSFET when it is on. It is typically connected to the ground or a lower potential in a circuit.
The specific distribution of these pins can vary slightly depending on the design, but generally, the FDS6680A will have multiple pins for drain, at least one for gate, and at least one for source. Always refer to the official datasheet for the most accurate pin configuration and electrical characteristics.