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EPC2012C
+NomenclatureGANFET N-CH 200V 5A DIE OUTLINE
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FabricantDisparaître moulage
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Pièce fabricant #EPC2012C
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En stock7568
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Spécifications
| Attribut | Valeur |
| Supplier | EPC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | eGaN® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V |
| Rds On(Max) @ Id Vgs | 100mOhm @ 3A, 5V |
| Vgs(th)(Max) @ Id | 2.5V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 1.3 nC @ 5 V |
| Vgs(Max) | +6V, -4V |
| Input Capacitance(Ciss)(Max) @ Vds | 140 pF @ 100 V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die Outline (4-Solder Bar) |
