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EL7242CSZ
+NomenclatureIC GATE DRVR LOW-SIDE 8SOIC
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FabricantRenesas Electronics, États - Unis
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Pièce fabricant #EL7242CSZ
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Package SOIC-8
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En stock4509
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Spécifications
| Attribut | Valeur |
| Package | Tube |
| ProductStatus | Active |
| DrivenConfiguration | Low-Side |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | N-Channel, P-Channel MOSFET |
| Voltage-Supply | 4.5V ~ 16V |
| LogicVoltage-VILVIH | 0.8V, 2.4V |
| Current-PeakOutput(SourceSink) | 2A, 2A |
| InputType | Inverting, Non-Inverting |
| Rise/FallTime(Typ) | 10ns, 10ns |
| OperatingTemperature | -40°C ~ 125°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Présentation
Description
Equivalent
Features
- 2 isolated channels (input to output)
- Phototransistor output suitable for TTL/CMOS logic
- High input/output isolation voltage (around 5 kV RMS)
- Fast switching for digital signaling
- Low input current requirements with good CTR
- High common-mode transient immunity
- Wide operating temperature range (-40°C to +125°C)
- Small 8-pin CSZ package (SMD, Pb-free, RoHS compliant)
Applications: microcontroller interfaces, data/signal isolation in noisy environments, motor control, power supplies, and safety-critical digital isolation.
Pinout
- Function: Dual-channel optocoupler (galvanic isolation between input and output). Each channel has an LED input and a phototransistor output (open-collector), suitable for isolating digital signals with pull-ups on the outputs.
Manufacturer
- What kind of company: Taiwan-based global supplier/manufacturer of optoelectronic components and LED-related products (optocouplers, LEDs, infrared devices, sensors, displays, etc.), serving consumer, automotive, and industrial markets.
Application
- Isolated gate drive for power MOSFETs/IGBTs in switching regulators and DC-DC converters
- Gate driving for motor drivers and inverters (BLDC, stepper, etc.)
- Isolated power supplies using flyback/forward converter topologies (telecom, consumer, industrial)
- Automotive and industrial control circuits requiring galvanic isolation between logic and high-voltage power stages
These use-cases exploit the device’s galvanic isolation and fast, safe gate-drive capability.