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HIP4081AIBZ
+NomenclatureIC GATE DRVR HALF-BRIDGE 20SOIC
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FabricantRenesas Electronics, États - Unis
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Pièce fabricant #HIP4081AIBZ
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Package SOIC-20
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En stock5327
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Spécifications
| Attribut | Valeur |
| Package | Tube |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 4 |
| GateType | N-Channel MOSFET |
| Voltage-Supply | 9.5V ~ 15V |
| LogicVoltage-VILVIH | 1V, 2.5V |
| Current-PeakOutput(SourceSink) | 2.6A, 2.4A |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 95 V |
| Rise/FallTime(Typ) | 10ns, 10ns |
| OperatingTemperature | -40°C ~ 125°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 20-SOIC (0.295, 7.50mm Width) |
Présentation
Description
The HIP4081AIBZ is typically a high-frequency, high-speed MOSFET driver IC. It is used to control the gates of N-channel MOSFETs in full-bridge configurations. This makes it suitable for applications such as motor control, power inverters, and other systems requiring efficient and precise control of high-power devices.
Key features often include:
- High-speed switching capabilities to enhance efficiency.
- The ability to drive four N-channel MOSFETs.
- Protection features like undervoltage lockout to safeguard against operational anomalies.
- Bootstrap circuitry to ensure the gate drive voltage remains above the MOSFET’s threshold.
It's designed to operate across a wide temperature range, making it versatile for various industrial applications. For detailed specifications, refer to the specific datasheet issued by the manufacturer.
Equivalent
Features
1. High Voltage Capability: It can handle supply voltages up to 80V, making it suitable for a wide range of applications.
2. Flexible Input Logic: The device supports both in-phase and out-of-phase input logic control, allowing compatibility with various control schemes.
3. High-Speed Operation: The driver offers fast rise and fall times, which are essential for efficient switching and reduced power loss.
4. Bootstrap Circuitry: Integrated bootstrap circuitry facilitates high-side drive capability without the need for an external high-side power supply.
5. Protection Features: The HIP4081AIBZ includes undervoltage lockout and shoot-through protection, enhancing the safety and reliability of the system.
6. Wide Temperature Range: It operates efficiently over a temperature range from -40°C to +125°C.
7. Output Currents: The device can deliver peak output currents of up to 2.5A, suitable for driving large FETs.
These features make the HIP4081AIBZ versatile for various demanding power electronics applications.
Pinout
Key functions and pin details include:
1. Supply and Ground:
- VDD (Pin 1): Logic supply voltage.
- VSS (Pins 5, 15): Logic ground.
- VB1, VB2, VB3, VB4 (Pins 13, 10, 20, 17): High-side floating supply voltages for the MOSFET drivers.
- VS1, VS2, VS3, VS4 (Pins 12, 11, 19, 18): High-side floating supply returns.
2. Inputs:
- IN1, IN2, IN3, IN4 (Pins 2, 3, 6, 7): Logic inputs for controlling the MOSFETs.
3. Outputs:
- HO1, HO2, HO3, HO4 (Pins 14, 9, 16, 21): High-side gate drive outputs.
- LO1, LO2, LO3, LO4 (Pins 4, 8, 22, 23): Low-side gate drive outputs.
The HIP4081AIBZ is capable of driving N-channel MOSFETs efficiently and is suitable for applications such as motor drives, power inverters, and power amplifiers.