DS1230Y-100

DS1230Y-100 is a Dallas/Maxim nonvolatile SRAM (NVSRAM) device. It combines fast, random-access RAM with nonvolatile data retention so memory contents survive power loss. The “-100” suffix signifies a 100 ns read access time.
Key points:
- Type: NVSRAM (RAM with nonvolatile backing)
- Purpose: retain data during power interruptions while allowing fast RAM-like access (firmware tables, calibration data, logs, etc.)
- Backup: data retained via a backup supply or mechanism when main power is removed
- Packages/voltages: available in standard packages and voltage ranges; exact details vary by revision
Note: exact memory density, interface (protocol), timing, and backup requirements vary; consult the DS1230Y-100 datasheet for precise specifications.

- Pin count: 8 pins (DIP8/SO8)
- Function: Serial, battery-backed nonvolatile SRAM (NVSRAM) for data storage with power-loss protection.

- Manufacturer: Dallas Semiconductor (a semiconductor company; now part of Maxim Integrated).
- What kind of company: It designs and manufactures memory and mixed-signal integrated circuits, including NVSRAM and real-time clock devices.

DS1230Y-100 is a battery-backed nonvolatile RAM (NVRAM) used in systems that must retain data when power is removed and provide fast SRAM-like access.
Typical applications:
- Embedded systems needing configuration data, logs, or small databases retained during power loss
- Data logging and fault/event recording in industrial, automotive, and energy equipment
- Caches and lookup tables in controllers with intermittent power
- Telecommunication and networking gear for persistent state information
- Medical devices and handheld instruments requiring nonvolatile memory
- Point-of-sale terminals and consumer electronics with persistent memory
- Portable/remote equipment needing rapid access plus backup data retention

DS1230Y-100 comes in an 8-pin DIP (DIP-8) package.