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DS1245Y-70IND+
+NomenclatureIC NVSRAM 1MBIT PARALLEL 32EDIP
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FabricantAnalog Equipment GmbH / intégration Maxim
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Pièce fabricant #DS1245Y-70IND+
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Fiche technique DS1245Y-70IND+ DataSheet
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Package DIP-32
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En stock6815
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Spécifications
| Attribut | Valeur |
| Package / Case | Tube |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 1Mb (128K x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 70ns |
| Access Time | 70 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Through Hole |
Présentation
Description
The DS1245Y-70IND+ provides a 70 ns access time, enabling quick data retrieval. It utilizes a JEDEC-standard 32-pin DIP package for easy integration. The module is designed to prevent data corruption during power loss by automatically switching to battery backup when power fails. This feature, combined with write protection, enhances data integrity. The NVSRAM is ideal for applications needing persistent storage without maintenance, such as industrial controls, telecommunications, and automotive systems. Its compact design and robust performance make it a versatile choice for engineers seeking reliable non-volatile memory solutions.
Equivalent
1. Cypress CY14B104L - A similar non-volatile SRAM.
2. STMicroelectronics M48T129Y - A timekeeper SRAM.
3. Renesas IS62WV51216BLL - A low-power SRAM (though not non-volatile).
4. Adesto Technologies AT25SF041 - Flash memory with similar applications (depends on use case).
Always verify pin configuration and specifications for compatibility.
Features
1. Capacity: It offers 1024K x 8 bits of storage, providing a total of 8Mbit (1MB) memory.
2. Non-Volatility: The memory retains data without power, thanks to an integrated lithium battery, ensuring data preservation for extended periods.
3. Access Speed: It has a fast read/write access time of 70 nanoseconds.
4. Operating Voltage: Functions within a voltage range of 4.5V to 5.5V.
5. Temperature Range: Specified for industrial temperature ranges from -40°C to +85°C, making it suitable for harsh environments.
6. Package Type: Comes in a 32-pin DIP (Dual In-line Package), facilitating easy installation and integration into various applications.
7. Endurance: Offers unlimited read and write cycles, enhancing durability and reliability.
8. Applications: Ideal for applications needing reliable data storage, including industrial, automotive, and telecommunications systems.
These features make the DS1245Y-70IND+ a robust solution for applications requiring reliable, non-volatile memory.
Pinout
Key functions of the DS1245Y-70IND+ include:
1. Non-Volatile Memory: It retains data even when power is removed, thanks to an internal lithium battery.
2. SRAM Capacity: Offers a memory size of 1024K bits (128K x 8).
3. Fast Access Time: The “70” in the part number indicates a 70 ns access time.
4. Industrial Temperature Range: The “IND” denotes its operational capability within the industrial temperature range of -40°C to +85°C.
5. Battery Backup: Ensures data retention for a significant period, even in the absence of power.
The device is used in applications requiring reliable data storage without the need for constant power, such as in embedded systems and industrial equipment.