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CSD19532Q5B
+NomenclatureMOSFET N-CH 100V 100A 8VSON
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FabricantTexas Instruments
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Pièce fabricant #CSD19532Q5B
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Package WSON-8
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En stock4433
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 100A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 4.9mOhm @ 17A, 10V |
| Vgs(th)(Max) @ Id | 3.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 62 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4810 pF @ 50 V |
| Power Dissipation (Max) | 3.1W (Ta), 195W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSON-CLIP (5x6) |
Présentation
Description
Equivalent
1. Infineon Technologies OptiMOS™ BSC123N08NS5
2. ON Semiconductor NTMFS5C628NL
3. Vishay Siliconix SiR462DP
These equivalents have similar specifications like voltage, current rating, and package type. Always verify compatibility with your application requirements.
Features
1. N-Channel MOSFET: Utilizes an N-channel configuration for efficient current flow and control.
2. Low On-Resistance: Offers very low R_DS(on) to minimize power loss and enhance efficiency, especially in high-current applications.
3. High Current Capability: Supports a high continuous drain current, suitable for demanding power applications.
4. Fast Switching: Provides rapid switching speeds, enabling efficient power conversion and reducing transition losses.
5. Thermal Performance: Comes in a compact 5x6 mm package with improved thermal characteristics for effective heat dissipation.
6. Gate Charge: Features low gate charge, which reduces the drive requirements and improves efficiency.
7. Robust Design: Built to withstand high voltages and currents, making it reliable for use in various industrial and consumer electronics.
8. Enhanced ESD Protection: Offers protection against electrostatic discharge, enhancing its durability and lifespan.
These features make the CSD19532Q5B suitable for applications such as power supply units, motor drives, and other power management systems.
Pinout
1. Source (S): The source terminals are connected together internally and are typically found on multiple pins. These are used to connect the source of the MOSFET to the circuit.
2. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the MOSFET is in the on or off state.
3. Drain (D): The drain terminals are also connected internally and are usually available on multiple pins, often connected to the thermal pad on the package. These pins connect the drain of the MOSFET to the circuit.
4. Thermal Pad: The exposed pad on the bottom is primarily used for heat dissipation and is generally connected to the drain electrically.
The CSD19532Q5B is designed for high-efficiency power conversion applications, with features like low R_DS(on) to minimize power loss and heat generation.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and voltage regulation modules for efficient energy distribution.
2. Switching Applications: Ideal for high-frequency switching in power supplies and motor control.
3. Automotive Systems: Used in electronic control units for efficient power delivery and management.
4. Consumer Electronics: Powers devices like laptops, tablets, and smartphones.
5. Industrial Equipment: Supports automation and control systems requiring reliable power switching.
Its compact size and robust performance make it suitable for high-efficiency applications.