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CSD16406Q3
+NomenclatureMOSFET N-CH 25V 19A/60A 8VSON
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FabricantTexas Instruments
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Pièce fabricant #CSD16406Q3
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En stock4694
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 25 V |
| Current-ContinuousDrain(Id)@25°C | 19A (Ta), 60A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 5.3mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 2.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 8.1 nC @ 4.5 V |
| Vgs(Max) | +16V, -12V |
| InputCapacitance(Ciss)(Max)@Vds | 1100 pF @ 12.5 V |
| PowerDissipation(Max) | 2.7W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSON-CLIP (3.3x3.3) |
Présentation
Equivalent
The CSD16406Q3 is a 40V, 6.8mΩ NexFET power MOSFET. Equivalent alternatives include:
- Infineon IPD90N04S4-04 (40V, 4.2mΩ)
- Vishay SiR626DP (40V, 6.3mΩ)
- ON Semiconductor NTMFS4C06N (40V, 6.5mΩ)
- STL120N4LF6 (40V, 6.0mΩ)
Check datasheets for exact compatibility in your application.
- Infineon IPD90N04S4-04 (40V, 4.2mΩ)
- Vishay SiR626DP (40V, 6.3mΩ)
- ON Semiconductor NTMFS4C06N (40V, 6.5mΩ)
- STL120N4LF6 (40V, 6.0mΩ)
Check datasheets for exact compatibility in your application.
Pinout
The CSD16406Q3 is a 12-pin dual N-channel NexFET power MOSFET in a 3.3mm × 3.3mm SON package.
Key Functions:
- Dual N-channel MOSFETs (two independent transistors in one package).
- Low on-resistance (RDS(on)) for efficient power switching.
- Optimized for high-frequency switching (e.g., DC-DC converters, load switches).
- Thermally enhanced package for improved heat dissipation.
Pinout Highlights:
- Pins 1-6 & 7-12: Gate, drain, and source connections for each MOSFET (symmetrical layout).
- Exposed thermal pad (bottom): Enhances thermal performance by connecting to PCB ground.
Applications:
- Voltage regulator modules (VRMs), point-of-load (POL) converters, and power management in compact designs.
Key Functions:
- Dual N-channel MOSFETs (two independent transistors in one package).
- Low on-resistance (RDS(on)) for efficient power switching.
- Optimized for high-frequency switching (e.g., DC-DC converters, load switches).
- Thermally enhanced package for improved heat dissipation.
Pinout Highlights:
- Pins 1-6 & 7-12: Gate, drain, and source connections for each MOSFET (symmetrical layout).
- Exposed thermal pad (bottom): Enhances thermal performance by connecting to PCB ground.
Applications:
- Voltage regulator modules (VRMs), point-of-load (POL) converters, and power management in compact designs.
Manufacturer
The CSD16406Q3 is a NexFET™ power MOSFET manufactured by Texas Instruments (TI).
Texas Instruments is a leading global semiconductor company specializing in analog and embedded processing technologies. Known for its innovation in power management, signal processing, and industrial applications, TI serves industries like automotive, industrial, and consumer electronics.
The CSD16406Q3 is part of TI’s high-efficiency NexFET™ series, designed for fast-switching applications such as DC/DC converters. TI is recognized for its reliable, high-performance semiconductor solutions.
Texas Instruments is a leading global semiconductor company specializing in analog and embedded processing technologies. Known for its innovation in power management, signal processing, and industrial applications, TI serves industries like automotive, industrial, and consumer electronics.
The CSD16406Q3 is part of TI’s high-efficiency NexFET™ series, designed for fast-switching applications such as DC/DC converters. TI is recognized for its reliable, high-performance semiconductor solutions.
Package
The CSD16406Q3 is a 40V, 60A N-channel NexFET power MOSFET in a PowerPAK® SO-8 package. This compact surface-mount package offers low RDS(on) and high current handling, suitable for high-efficiency power applications like DC-DC converters. Its SO-8 footprint ensures compatibility with standard PCB layouts while enhancing thermal and electrical performance.
