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CSD17501Q5A
+NomenclatureMOSFET N-CH 30V 100A 8VSON
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FabricantTexas Instruments
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Pièce fabricant #CSD17501Q5A
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Package TDFN-8
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En stock6416
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 2.9mOhm @ 25A, 10V |
| Vgs(th)(Max)@Id | 1.8V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 17 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2630 pF @ 15 V |
| PowerDissipation(Max) | 3.2W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSONP (5x6) |
Présentation
Description
The introduction to this component would typically include its key features, such as its electrical characteristics (voltage, current handling), package type, pin configuration, and intended applications. It might also highlight unique selling points, like high efficiency, low power consumption, or specific functionalities that make it suitable for certain applications (e.g., power management, digital processing, etc.).
Knowing the specific manufacturer or the context of its use could provide further insights into its capabilities and compatibility with other components or systems. For more detailed information, consulting the datasheet or technical documentation from the manufacturer would be essential. These documents offer comprehensive details necessary for designers and engineers to integrate the component effectively into their projects.
Equivalent
1. NXP's PSMN2R0-30PL
2. ON Semiconductor's NTMFS5C628NL
3. Infineon's BSC050N03LS
When selecting an equivalent, always verify the specific electrical characteristics and package compatibility with your application requirements.
Features
1. N-Channel Configuration: Optimized for high-speed switching with low on-resistance.
2. Voltage Rating: Typically supports a drain-to-source voltage (V_DS) of up to 30V.
3. Current Handling: Can handle a continuous drain current of approximately 24A at 25°C.
4. Low On-Resistance: Offers a low R_DS(on), typically around 5.3 mΩ, enhancing efficiency by reducing conduction losses.
5. Package Type: Comes in a compact, thermally enhanced SON 5x6mm package, aiding in space-saving on the PCB.
6. Thermal Performance: Features an exposed pad for better heat dissipation, which is crucial for high-power applications.
7. Fast Switching: Designed for quick switching speeds, beneficial for high-frequency applications.
8. Applications: Ideal for DC-DC converters, motor control, and other power management applications where efficiency is critical.
These features make the CSD17501Q5A suitable for applications demanding high efficiency and compact design.
Pinout
The primary function of this MOSFET is to act as an electronic switch for controlling power distribution in devices. It is characterized by a low on-resistance, allowing it to handle high current loads efficiently. This makes it suitable for applications like DC-DC converters, load switches, and synchronous rectification in power supplies.
The specific pin configuration includes the drain, source, and gate connections, which align with the typical MOSFET functionality of controlling the flow of electricity through the channel based on the gate voltage.