Images à titre indicatif uniquement
CSD17310Q5A
+NomenclatureMOSFET N-CH 30V 21A/100A 8VSON
-
FabricantTexas Instruments
-
Pièce fabricant #CSD17310Q5A
-
Package TDFN-8
-
En stock5654
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 21A (Ta), 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 3V, 8V |
| RdsOn(Max)@IdVgs | 5.1mOhm @ 20A, 8V |
| Vgs(th)(Max)@Id | 1.8V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 11.6 nC @ 4.5 V |
| Vgs(Max) | +10V, -8V |
| InputCapacitance(Ciss)(Max)@Vds | 1560 pF @ 15 V |
| PowerDissipation(Max) | 3.1W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSONP (5x6) |
Présentation
Description
The device is usually housed in a compact package, allowing for ease of integration into various circuit designs. Its specifications include voltage and current ratings that need to be carefully considered during the design phase to ensure compatibility with the intended application. Engineers often choose such components based on their thermal performance, reliability, and efficiency metrics. Datasheets provided by manufacturers like Texas Instruments offer detailed technical specifications, including electrical characteristics, thermal data, and application guidelines, which are crucial for proper implementation in electronic systems.
Equivalent
1. NXP's PHK33NQ10T.
2. Vishay's SiR680DP.
3. Infineon's BSC123N08NS3 G.
Always verify specific parameters like voltage, current ratings, and package compatibility for precise substitution.
Features
- Voltage Rating: 100V
- Current Rating: 60A (continuous), 240A (pulsed)
- Low RDS(on): 3.3 mΩ (max at VGS=10V)
- Fast Switching: Low gate charge (QG=48nC) and low output charge (QOSS=130nC) for reduced losses.
- Thermal Performance: Low thermal resistance (1.4°C/W junction-to-case) for better heat dissipation.
- Package: 5mm x 6mm PowerPAD™ SO-8 for compact designs.
- Applications: Ideal for DC/DC converters, motor drives, and power tools.
Designed for high power density and efficiency, it suits space-constrained, high-current systems.
Pinout
1. Gate (G) - Used to control the MOSFET's switching operation.
2. Source (S) - Connected to the source terminal of the MOSFET.
3. Drain (D) - Connected to the drain terminal of the MOSFET.
The package typically includes a large drain pad and additional source pads for better electrical and thermal performance. This MOSFET is designed for low on-resistance and high-efficiency switching applications, making it suitable for use in DC-DC converters and power management circuits.
Manufacturer
Application
1. DC-DC Converters: Used in buck, boost, and synchronous rectification circuits for voltage regulation.
2. Power Supplies: Enhances efficiency in SMPS (Switched-Mode Power Supplies) and point-of-load (POL) converters.
3. Motor Control: Drives small motors in automotive, industrial, and consumer electronics.
4. Battery Management: Protects and switches power in portable devices and energy storage systems.
5. Load Switching: Enables fast switching in power distribution for servers, telecom, and IoT devices.
Its low RDS(on) and compact package (SON 5x6mm) make it ideal for space-constrained, high-performance designs.