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C3M0040120K
+Nomenclature1200V 40MOHM SIC MOSFET
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FabricantWolfspeed, société par actions limitée.
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Pièce fabricant #C3M0040120K
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Fiche technique C3M0040120K DataSheet
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Package TO-247-4
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En stock2410
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Spécifications
| Attribut | Valeur |
| Package | Tube |
| Series | C3M™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 66A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 15V |
| RdsOn(Max)@IdVgs | 53.5mOhm @ 33.3A, 15V |
| Vgs(th)(Max)@Id | 3.6V @ 9.2mA |
| GateCharge(Qg)(Max)@Vgs | 99 nC @ 15 V |
| Vgs(Max) | +15V, -4V |
| InputCapacitance(Ciss)(Max)@Vds | 2900 pF @ 1000 V |
| PowerDissipation(Max) | 326W (Tc) |
| OperatingTemperature | -40°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-4L |
Présentation
Description
If C3M0040120K refers to a semiconductor component, like a MOSFET or diode, for example, the introduction would include details such as its purpose, key specifications (voltage, current ratings), and typical applications (power conversion, amplification). If it pertains to a different category, details might differ accordingly.
For an accurate introduction, check the manufacturer's website, datasheets, or reach out to your supplier or distributor for detailed technical specifications and application notes relevant to your needs.
Equivalent
1. ROHM SCT3060AL
2. Infineon IMZA120R045M1
3. STMicroelectronics SCTWA45N120
4. ON Semiconductor NVHL080N120SC1
These components offer similar voltage ratings and performance characteristics but confirm specifications for exact equivalency with your application needs.
Features
1. Low RDS(on): This MOSFET has a low on-resistance, which helps reduce conduction losses and improve efficiency in power conversion applications.
2. High Voltage Rating: It typically has a high voltage rating, often around 1200V, making it suitable for high-voltage applications.
3. Fast Switching Speeds: The SiC technology enables faster switching speeds compared to traditional silicon MOSFETs, which can lead to reduced switching losses and smaller passive components.
4. High Thermal Conductivity: SiC material offers better thermal conductivity, allowing for more efficient heat dissipation and potentially reducing the need for extensive cooling solutions.
5. Robustness and Reliability: SiC MOSFETs are known for their robustness in harsh environments, offering better performance at high temperatures and being more resilient to voltage spikes.
6. Reduced System Size: The efficiency and thermal performance of SiC technology can lead to a reduction in overall system size and weight.
These features make the C3M0040120K ideal for applications in renewable energy, industrial power supplies, and electric vehicles.
Pinout
1. Gate (G): The gate terminal is used to control the MOSFET’s switching operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows from the load to the MOSFET when it is turned on.
3. Source (S): The source is the terminal through which the current flows out of the MOSFET back to the ground or lower potential side of the circuit.
This device is designed for high-speed switching and high-efficiency applications, offering benefits such as reduced switching losses and improved thermal performance compared to traditional silicon MOSFETs.