C3M0065100K

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C3M0065100K

+Nomenclature

SICFET N-CH 1000V 35A TO247-4L

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Spécifications

Attribut Valeur
Package / Case Tube
Series C3M™
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain(Id) @ 25°C 35A (Tc)
Drive Voltage(Max Rds On Min Rds On) 15V
Rds On(Max) @ Id Vgs 78mOhm @ 20A, 15V
Vgs(th)(Max) @ Id 3.5V @ 5mA
Gate Charge(Qg)(Max) @ Vgs 35 nC @ 15 V
Vgs(Max) +19V, -8V
Input Capacitance(Ciss)(Max) @ Vds 660 pF @ 600 V
Power Dissipation (Max) 113.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L

Présentation

Description

The C3M0065100K is a 650V, 100mΩ silicon carbide (SiC) MOSFET from Wolfspeed, designed for high-efficiency power applications. Key features include:
- Low on-resistance (RDS(on)): Enhances efficiency in high-power systems.
- Fast switching: Reduces switching losses, ideal for high-frequency designs.
- High-temperature operation: Reliable performance in harsh environments.
- SiC technology: Offers superior thermal conductivity and breakdown voltage compared to silicon.
Common applications include electric vehicle (EV) charging, solar inverters, and industrial power supplies. Its robust design ensures improved energy efficiency and reduced system size.
For detailed specs, refer to Wolfspeed’s datasheet.

Equivalent

The C3M0065100K is a 650V, 100mΩ SiC MOSFET from Wolfspeed. Equivalent alternatives include:
- Infineon: IMZA65R100M1H (650V, 100mΩ)
- ROHM: SCT3040KR (650V, 100mΩ)
- STMicroelectronics: SCTW100N65G2V (650V, 100mΩ)
These offer similar performance in SiC MOSFET technology. Verify pinout and specs for compatibility.

Features

The C3M0065100K is a 650V, 100mΩ SiC MOSFET from Wolfspeed, designed for high-efficiency power applications. Key features include:
- Low On-Resistance (RDS(on)): 100mΩ (typ.) at 15V VGS, reducing conduction losses.
- High Voltage Rating: 650V, suitable for industrial and automotive applications.
- Fast Switching: Low gate charge (QG) and output capacitance (COSS), enabling high-frequency operation.
- High Temperature Operation: Robust performance up to 175°C.
- Low Reverse Recovery Losses: SiC technology minimizes switching losses.
- Avalanche Rated: Enhanced ruggedness for harsh environments.
Ideal for power supplies, EV charging, and renewable energy systems.

Pinout

The C3M0065100K is a 650V, 100mΩ SiC MOSFET from Wolfspeed in a TO-247-4L package with 4 pins.
Pin Functions:
1. Gate (G) – Controls switching.
2. Drain (D) – High-voltage terminal.
3. Source (S) – Current return path.
4. Kelvin Source (Sₖ) – Separate sense terminal for improved gate drive accuracy, reducing parasitic inductance.
This configuration enhances high-frequency performance and reduces switching losses.

Application

The C3M0065100K is a SiC MOSFET from Wolfspeed, designed for high-efficiency power applications. Key application areas include:
- Electric Vehicles (EVs): On-board chargers, DC-DC converters.
- Renewable Energy: Solar inverters, wind power systems.
- Industrial Power Supplies: High-frequency SMPS, UPS systems.
- Data Centers: Server power supplies, PFC circuits.
- Aerospace & Defense: High-reliability power conversion.
Its 650V/60mΩ rating and fast switching make it ideal for high-power, high-frequency designs requiring efficiency and thermal performance.

Package

The C3M0065100K is a SiC MOSFET (Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor) in a TO-247-4L package. It features a 650V voltage rating, 100mΩ on-resistance, and is designed for high-efficiency power applications. The 4-lead TO-247 variant reduces switching losses and improves thermal performance compared to standard TO-247 packages.

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