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BSO615NGHUMA1
+NomenclatureMOSFET 2N-CH 60V 2.6A 8SOIC
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FabricantTechnologie Infineon
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Pièce fabricant #BSO615NGHUMA1
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Package SOIC-8
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En stock2866
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
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Spécifications
| Attribut | Valeur |
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SIPMOS® |
| ProductStatus | Obsolete |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 2.6A |
| RdsOn(Max)@IdVgs | 150mOhm @ 2.6A, 4.5V |
| Vgs(th)(Max)@Id | 2V @ 20µA |
| GateCharge(Qg)(Max)@Vgs | 20nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 380pF @ 25V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
