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BD139
+NomenclatureTRANS NPN 80V 1.5A TO126
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FabricantSemi - conducteurs
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Pièce fabricant #BD139
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Package SOT-32
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En stock5491
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Spécifications
| Attribut | Valeur |
| Package / Case | Bulk |
| Part Status | Obsolete |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown(Max) | 80 V |
| Vce Saturation(Max) @ Ib Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff(Max) | 100nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 40 @ 150mA, 2V |
| Power - Max | 1.25 W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
Présentation
Description
The transistor's gain (hFE) typically ranges from 40 to 160, allowing it to amplify signals efficiently. It comes in a TO-126 package, which facilitates easy mounting on a heat sink to manage thermal performance. This transistor is frequently used in audio amplifiers, motor drivers, and other electronic projects requiring reliable switching and amplification.
Its complementary PNP counterpart is the BD140, often used in push-pull amplifier configurations. The BD139 is valued for its robustness, availability, and cost-effectiveness, making it a staple component for hobbyists and professionals alike.
Equivalent
1. 2N5190
2. TIP31
3. KSD526
4. MJE243
5. 2SD882
6. TIP41
These transistors have similar electrical characteristics and can be used as substitutes in circuits requiring equivalent voltage and current handling capabilities. Always verify specific parameters to ensure compatibility with your application.
Features
1. Package Type: TO-126, which allows for moderate power dissipation.
2. Collector-Emitter Voltage (Vce): Can handle up to 80V.
3. Collector-Base Voltage (Vcb): Rated for up to 80V.
4. Emitter-Base Voltage (Veb): Maximum of 5V.
5. Collector Current (Ic): Can support up to 1.5A.
6. Power Dissipation (Ptot): Capable of dissipating up to 12.5W with adequate heat sinking.
7. DC Current Gain (hFE): Typically ranges from 25 to 250, depending on the variant and operating conditions.
8. Transition Frequency (fT): Around 190 MHz, suitable for audio and low RF applications.
9. Operating Temperature: Range from -55°C to +150°C.
10. Applications: Used in audio amplifiers, driver stages in high-power audio circuits, and as a switch for various electronic applications.
These features make the BD139 versatile for medium-power amplification and switching tasks.
Pinout
1. Collector (Pin 1): The collector is the pin through which the main current flows from the collector to the emitter when the transistor is in the active region.
2. Base (Pin 2): The base is the control pin that regulates the transistor's operation. A small current flowing into the base controls a larger current flowing from the collector to the emitter.
3. Emitter (Pin 3): The emitter is the pin where the current flows out of the transistor. It is typically grounded or connected to the negative side of the power supply in NPN configurations.
The BD139 can handle a collector current of up to 1.5A and has a collector-emitter voltage rating of 80V. It is widely used in various applications, such as audio amplifiers and power management circuits.
Manufacturer
1. NXP Semiconductors: Headquartered in the Netherlands, NXP is a global semiconductor manufacturer. It produces a wide range of semiconductor products, including microcontrollers, sensors, and RF power solutions.
2. ON Semiconductor: Based in the United States, ON Semiconductor provides a broad portfolio of energy-efficient solutions, including power and signal management, logic, discrete, and custom devices.
3. STMicroelectronics: An Italian-French multinational, STMicroelectronics is a leading global semiconductor company. It offers a variety of products, including microcontrollers, sensors, and power management devices.
These companies specialize in the design and manufacture of a wide array of semiconductor products used in various industries, including automotive, industrial, consumer electronics, and telecommunications.