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AUIRS2336STR
+NomenclatureIC GATE DRVR HALF-BRIDGE 28SOIC
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FabricantTechnologie Infineon
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Pièce fabricant #AUIRS2336STR
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Fiche technique AUIRS2336STR DataSheet
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Package SOIC-28
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En stock2350
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q100 |
| ProductStatus | Obsolete |
| DrivenConfiguration | Half-Bridge |
| ChannelType | 3-Phase |
| NumberofDrivers | 6 |
| GateType | IGBT, N-Channel, P-Channel MOSFET |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VILVIH | 0.8V, 2.5V |
| Current-PeakOutput(SourceSink) | 200mA, 350mA |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 125ns, 50ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 28-SOIC (0.295, 7.50mm Width) |
Présentation
Description
Key features of the AUIRS2336STR include:
1. High-side and Low-side Driver: It can drive both high-side and low-side MOSFETs, making it versatile for various circuit configurations.
2. Bootstrap Circuitry: Includes integrated bootstrap circuitry for efficient high-side operation.
3. Under-voltage Lockout (UVLO): Provides protection by shutting down the driver if the supply voltage is below a certain threshold, preventing unexpected device behavior.
4. Fast Switching: Supports high-frequency operations, enhancing overall system performance.
5. Compact Package: The device comes in a small surface-mount package, making it suitable for space-constrained applications.
Overall, the AUIRS2336STR is valued for its robustness and efficiency in driving power semiconductors in demanding environments.
Equivalent
1. TI UCC21710: A high-speed isolated gate driver for IGBTs and SiC MOSFETs.
2. ON Semiconductor NCP5183: A high-speed, high-voltage gate driver.
3. Power Integrations SCALE-iDriver: Isolated gate driver for IGBTs and MOSFETs.
4. Infineon 1ED44173: A single-channel isolated gate driver for IGBTs and MOSFETs.
These alternatives offer similar functionality in driving high-voltage power devices.
Features
1. High-Side Driver: Suitable for driving N-channel MOSFETs in high-side configurations.
2. Operating Voltage: Supports a wide input voltage range, making it flexible for various automotive systems.
3. Protection Features: Includes under-voltage lockout (UVLO) and over-temperature protection to enhance reliability and safety.
4. Bootstrap Circuit: Integrates a bootstrap circuit for efficient operation, reducing the need for external components.
5. Fast Switching: Capable of fast switching to improve efficiency in power applications.
6. Package: Typically available in a compact package suitable for space-constrained designs.
7. Robust Design: Engineered to withstand harsh automotive environments, including temperature extremes and electrical noise.
These features make the AUIRS2336STR a reliable choice for automotive power management applications.
Pinout
1. VCC (Pin 1): Supply voltage for the IC.
2. IN (Pin 2): Input control signal for the high-side driver.
3. VSS (Pin 3): Ground reference pin.
4. VB (Pin 4): High-side floating supply voltage.
5. HO (Pin 5): High-side output to drive the gate of the external high-side MOSFET.
6. VS (Pin 6): High-side floating supply return.
7. FLT/SD (Pin 7): Fault and shutdown pin, often used for fault signaling and to shut down the driver.
8. COM (Pin 8): Common ground reference for the device.
The AUIRS2336STR is designed to drive N-channel MOSFETs and offers features like under-voltage lockout, protection against shoot-through, and robust gate drive capability, making it suitable for automotive and other high-reliability applications.