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AUIRFS4127TRL
+NomenclatureMOSFET N-CH 200V 72A D2PAK
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FabricantRedresseur international
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Pièce fabricant #AUIRFS4127TRL
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Fiche technique AUIRFS4127TRL DataSheet
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Package TO-263-3
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En stock4441
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Spécifications
| Attribut | Valeur |
| Package / Case | Bulk |
| Series | Automotive, AEC-Q101, HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 72A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 22mOhm @ 44A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 150 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 5380 pF @ 50 V |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3 |
Présentation
Description
Key specifications:
- Low on-resistance (RDS(on)): 1.7mΩ (max) at VGS=10V, reducing conduction losses.
- AEC-Q101 qualified, ensuring reliability for automotive use.
- Fast switching with optimized gate charge (Qg) for efficiency.
- Compact D2PAK (TO-263) package, aiding thermal management.
Ideal for 12V/24V automotive systems, including electric power steering (EPS), battery management, and LED lighting. Its robust design ensures durability in harsh environments.
For detailed specs, refer to Infineon’s datasheet.
Equivalent
- Infineon IPP120N10NFD (100V, 120A)
- STMicroelectronics STL120N10F7 (100V, 120A)
- Vishay SiHG120N100E (100V, 120A)
- ON Semiconductor NTMFS5C410N (100V, 120A)
Check datasheets for exact compatibility in your application.
Features
- Voltage Rating: 40V
- Current Rating: 120A (pulsed)
- Low On-Resistance (RDS(on)): 1.7mΩ (max @ VGS=10V)
- Fast Switching: Optimized for high efficiency
- AEC-Q101 Qualified: Reliable for automotive use
- Logic-Level Gate Drive: Compatible with 4.5V drive
- Robust Package: D2PAK (TO-263) for high power dissipation
- Low Gate Charge (Qg): Enhances switching performance
Ideal for DC-DC converters, motor control, and power distribution in vehicles.
Pinout
1. Gate (G): Controls the switching operation.
2. Drain (D): Main current terminal (connected to the tab).
3. Source (S): Main current return path.
4. No Connection (NC): Unused pin.
5. Kelvin Source (S'): Provides accurate voltage sensing for improved switching performance.
This MOSFET is designed for high-efficiency power applications, featuring low on-resistance (RDS(on)) and fast switching.
Application
1. Automotive Systems – Engine control, lighting, and power distribution.
2. DC-DC Converters – Efficient power conversion in industrial and automotive applications.
3. Motor Control – Drives for brushed/brushless motors in tools and robotics.
4. Power Management – Load switching and battery protection circuits.
5. Industrial Applications – High-reliability power switching in harsh environments.
Its low on-resistance and high current capability make it ideal for high-efficiency, compact designs.