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2N5401
+NomenclatureTRANS PNP 150V 0.6A TO92
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FabricantSemi - conducteurs
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Pièce fabricant #2N5401
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Fiche technique 2N5401 DataSheet
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Package TO-226-3
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En stock12978
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Spécifications
| Attribut | Valeur |
| Supplier | onsemi |
| Package / Case | Bulk |
| Part Status | Obsolete |
| Transistor Type | PNP |
| Current - Collector(Ic)(Max) | 600 mA |
| Voltage - Collector Emitter Breakdown(Max) | 150 V |
| Vce Saturation(Max) @ Ib Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff(Max) | 50nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 60 @ 10mA, 5V |
| Power - Max | 625 mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
Présentation
Description
The 2N5401 is typically housed in a TO-92 package, making it compact for integration into various circuits. Its high voltage and current capabilities make it ideal for use in audio amplifiers, signal amplifiers, and switching circuits.
Key electrical characteristics include a DC current gain (h_FE) of 30 to 150, ensuring efficient amplification. Its maximum power dissipation is around 625 mW, which is suitable for many general-purpose applications. The transistor's transition frequency is approximately 50 MHz, indicating its ability to handle relatively high-speed applications.
Overall, the 2N5401 is valued for its robustness, reliability, and versatility in multiple electronic applications.
Equivalent
Features
1. Polarity: PNP
2. Maximum Collector-Emitter Voltage (VCEO): 150V
3. Maximum Collector Current (IC): 600mA
4. Maximum Power Dissipation (Ptot): 625mW
5. DC Current Gain (hFE): Typically ranges from 30 to 240, depending on the test conditions.
6. Package Type: Usually available in a TO-92 package, which is suitable for through-hole mounting.
7. Operating Temperature Range: Typically from -55°C to +150°C.
8. Applications: Used in signal amplification, switching circuits, and as a general-purpose transistor in various electronic projects.
Its high voltage and moderate current characteristics make it suitable for medium voltage applications where a PNP transistor is needed, especially when space and power budget are limited.
Pinout
1. Emitter (E): Usually connected to the more negative side of the power supply.
2. Base (B): Used to control the transistor by allowing current to flow between the emitter and collector.
3. Collector (C): Usually connected to the load and allows current to flow through when the base is activated.
The 2N5401 is often used in applications requiring low to moderate power handling. It can handle a collector current of up to 600 mA and a collector-emitter voltage of 150V. Its configuration makes it suitable for use in audio amplifiers and signal processing circuits.
Manufacturer
ON Semiconductor, now known simply as onsemi, is a multinational company specializing in power and signal management, logic, discrete, and custom devices for various applications, including automotive, industrial, and consumer electronics. They are known for providing a wide range of semiconductor solutions.
Central Semiconductor is a company that focuses on the design and manufacture of innovative discrete semiconductors. They supply a variety of standard and custom device solutions, catering to specific customer needs, especially in applications where small size, low power, and high performance are critical.
Transistors like the 2N5401 are often manufactured by multiple companies to ensure widespread availability and to meet the varying specifications and quality standards required by different industries.