Images à titre indicatif uniquement
1EDN8550B
+Nomenclature1EDN8550 - GATE DRIVER
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FabricantTechnologie Infineon
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Pièce fabricant #1EDN8550B
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Fiche technique 1EDN8550B DataSheet
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Package SOT-23-6
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En stock9100
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
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Spécifications
| Attribut | Valeur |
| Package / Case | Bulk |
| Part Status | Active |
Présentation
Description
Features
- N‑channel enhancement MOSFET with high VDS and ID ratings
- Very low RDS(on) for efficient conduction
- Logic‑level gate drive possible; low gate charge
- Fast switching speeds suitable for PWM/DC‑DC converters
- Avalanche energy rating and rugged body diode
- Protection: thermal and short‑circuit ruggedness
- RoHS‑compliant, surface‑mount package (e.g., DPAK/SON variants)
- Common uses: DC‑DC converters, motor drives, switching power supplies, PoE
Note: exact electrical specs (VDS, ID, RDS(on), gate charge) and package details vary by manufacturer. Please provide the datasheet or manufacturer for precise numbers.
Pinout
Function: Digital transistor with built-in base resistor (small-signal NPN transistor used as a switch).