Part A
AO4803A
Alpha Omega Semiconductor GmbH.
- Lifecycle
- Active
- Stock
- 4306 PCS
- Package
- SOIC-8
- Series
- Transistors - FET, MOSFET - matrices
Replacement verdict
Compatible functional replacement candidate
The AO4803A and AO4806L are both dual P-channel enhancement-mode MOSFETs in the same SOIC-8 package with comparable voltage and current ratings, making the AO4806L a viable functional replacement candidate for the AO4803A in most low-voltage switching applications. Designers should validate on-resistance, gate threshold, and thermal margins against the target circuit before final qualification.
Channel Configuration
High match
Package Type
High match
On-Resistance
Validation required
Gate Threshold Voltage
Validation required
Parts at a glance
Part B
AO4806L
Alpha Omega Semiconductor GmbH.
- Lifecycle
- Active
- Stock
- 5552 PCS
- Package
- SOIC-8
- Series
- Transistors - FET, MOSFET - matrices
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AO4803A | AO4806L | Why it matters |
|---|---|---|---|
| Channel Type / Configuration | Dual P-Channel | Dual N-Channel | Channel polarity determines the polarity of the control signal and load path; P-channel and N-channel devices are not directly substitutable in most circuits. |
| Drain-Source Voltage (Vds) | -30 V | 30 V | Maximum Vds sets the highest voltage the device can block; exceeding it risks avalanche breakdown and device failure. |
| Continuous Drain Current (Id) | -5 A | 6 A | Rated continuous current defines the load the FET can carry; insufficient rating leads to overheating and reduced reliability. |
| Rds(on) at Vgs = 10 V | 40 mΩ (max) | 30 mΩ (max) | On-resistance directly affects conduction losses and voltage drop; lower Rds(on) improves efficiency and reduces heat generation. |
| Gate Threshold Voltage (Vgs(th)) | -1.0 V to -2.4 V | 1.0 V to 2.4 V | Threshold voltage determines the gate drive level needed to turn the device on; mismatched thresholds can cause improper switching or shoot-through. |
| Gate-Source Voltage (Vgs max) | ±20 V | ±20 V | Maximum Vgs limits the gate drive voltage; exceeding it can rupture the gate oxide and permanently damage the device. |
| Power Dissipation (Pd) | 2 W | 2 W | Power dissipation rating indicates thermal capability; it constrains how much loss the package can handle without overheating. |
| Package | SOIC-8 | SOIC-8 | Package footprint and thermal characteristics must match for board-level drop-in compatibility. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | AO4803A | AO4806L |
|---|---|---|
| Supplier | - | Alpha & Omega Semiconductor Inc. |
| Part Status | Not For New Designs | Obsolete |
| FET Type | 2 P-Channel (Dual) | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V | 20V |
| Rds On(Max) @ Id Vgs | 46mOhm @ 5A, 10V | 14mOhm @ 9.4A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 11nC @ 10V | 17.9nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 520pF @ 15V | 1810pF @ 10V |
| Power - Max | 2W | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Current - Continuous Drain(Id) @ 25°C | 5A | - |
Frequently asked questions
What are the main differences between the AO4803A and AO4806L MOSFETs?
The AO4803A is a dual P-channel enhancement-mode MOSFET, while the AO4806L is a dual N-channel enhancement-mode MOSFET. Both are offered in an SO-8 package by Alpha & Omega Semiconductor, but they differ in channel polarity, voltage rating, and on-resistance characteristics, so they are not interchangeable in a given circuit without redesign.
What is the drain-source voltage (VDS) rating of each device?
The AO4803A has a VDS rating of -30 V (P-channel), and the AO4806L has a VDS rating of 30 V (N-channel). The polarity difference means each device must be used in the correct circuit orientation.
How do the on-resistance (RDS(on)) specifications compare?
The AO4803A specifies RDS(on) of approximately 55 mΩ at VGS = -10 V and about 85 mΩ at VGS = -4.5 V. The AO4806L specifies RDS(on) of approximately 20 mΩ at VGS = 10 V and about 28 mΩ at VGS = 4.5 V. The N-channel AO4806L offers lower conduction resistance in its intended operating conditions.
Are the AO4803A and AO4806L pin-compatible in the SO-8 package?
Both devices use the standard SO-8 (SOIC-8) package with the same pin count and footprint, but the internal channel configuration and polarity differ. Pin function assignments (gate, source, drain) must be verified against each manufacturer datasheet before considering any board-level substitution.
Can the AO4803A be replaced by the AO4806L in an existing design?
No, not as a direct drop-in replacement. The AO4803A is P-channel and the AO4806L is N-channel, so gate drive polarity, source/drain orientation, and circuit topology would need to be redesigned. Substitution requires full validation against the manufacturer datasheets and the target application.
What are typical applications for each device?
The AO4803A (dual P-channel) is commonly used for load switching, power management, and high-side switching where P-channel devices are preferred. The AO4806L (dual N-channel) is typically used for low-side switching, DC-DC conversion, and synchronous rectification where low RDS(on) N-channel devices are advantageous.
What gate-source voltage (VGS) ratings apply to these MOSFETs?
Both the AO4803A and AO4806L are specified with a maximum gate-source voltage of ±20 V. Gate drive levels should remain within this rating, and the specified RDS(on) values are characterized at VGS levels such as 4.5 V and 10 V per the respective datasheets.