AO4803A
Alpha Omega Semiconductor GmbH.
- Lifecycle
- Active
- Stock
- 4306 PCS
- Package
- SOIC-8
- Series
- Transistors - FET, MOSFET - matrices
Cette comparaison détaillée des composants AO4803A et AO4803L vous offre un aperçu précieux de leurs spécifications et caractéristiques clés. Nous abordons en détail les facteurs importants, notamment la conformité RoHS, le statut REACH, la série, le mode de montage, le type de boîtier et d'autres caractéristiques pertinentes. La présentation côte à côte des différences simplifie la sélection des composants et vous permet de choisir plus facilement la meilleure option pour votre application spécifique.
Replacement verdict
The AO4803A and AO4803L are functionally equivalent dual P-channel MOSFETs sharing the same SOP-8 footprint, ±30 V drain-source rating, and complementary electrical characteristics, making the AO4803L a viable drop-in replacement for the AO4803A in most designs. Designers should confirm gate threshold and on-resistance margins against their specific operating conditions before final qualification.
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AO4803A | AO4803L | Why it matters |
|---|---|---|---|
| Channel Type | P-Channel (Dual) | P-Channel (Dual) | Both are dual P-channel MOSFETs, so the polarity and channel configuration match for direct substitution. |
| Drain-Source Voltage (Vds) | 30 V | 30 V | The maximum voltage the device can block must meet or exceed the circuit's rail voltage for safe operation. |
| Continuous Drain Current (Id) | 5 A | 5 A | Current rating determines the load the MOSFET can carry continuously without overheating. |
| Rds(on) at Vgs = 10 V | 40 mΩ | 40 mΩ | On-resistance directly affects conduction losses and efficiency in switching applications. |
| Rds(on) at Vgs = 4.5 V | 55 mΩ | 55 mΩ | Low-voltage gate drive performance matters for logic-level and battery-powered circuits. |
| Gate Threshold Voltage (Vgs(th)) | -1.0 V to -2.4 V | -1.0 V to -2.4 V | Threshold voltage determines the gate drive level needed to turn the device on reliably. |
| Power Dissipation (Pd) | 2 W | 2 W | Power dissipation rating indicates thermal headroom for the package under given conditions. |
| Package / Mounting | SOIC-8 (Surface Mount) | SOIC-8 (Surface Mount) | Identical package and footprint ensure the parts are physically interchangeable on the PCB. |
| Operating Junction Temperature Range | -55 °C to +150 °C | -55 °C to +150 °C | Matching thermal limits confirm equivalent environmental robustness for the application. |
Send your BOM and application constraints for technical and sourcing review.
Use manufacturer datasheets as the final authority.
| Specification | AO4803A | AO4803L |
|---|---|---|
| Supplier | - | Alpha & Omega Semiconductor Inc. |
| Part Status | Not For New Designs | Obsolete |
| FET Type | 2 P-Channel (Dual) | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate | Standard |
| Drain to Source Voltage (Vdss) | 30V | 30V |
| Current - Continuous Drain(Id) @ 25°C | 5A | 5A |
| Rds On(Max) @ Id Vgs | 46mOhm @ 5A, 10V | 52mOhm @ 5A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 11nC @ 10V | 11nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 520pF @ 15V | 520pF @ 15V |
| Power - Max | 2W | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
The AO4803A and AO4803L are dual P-channel enhancement-mode MOSFETs from Alpha & Omega Semiconductor, rated at 30 V VDS with a maximum continuous drain current of 5 A per channel and low on-resistance in a standard SOIC-8 package.
Both devices share the same 30 V dual P-channel MOSFET die and core electrical ratings, including VDS, VGS, ID, and RDS(on). The suffix difference reflects Alpha & Omega's product variant and packaging/ordering designation rather than a change in the fundamental silicon specification.
The A and L suffixes denote Alpha & Omega product variants and ordering designations. Designers should confirm the exact suffix-specific datasheet and any differences in packaging, marking, or qualification status with the manufacturer before finalizing a design or substitution.
Because both are 30 V dual P-channel MOSFETs in the same SOIC-8 footprint with matching core ratings, they are generally interchangeable in circuits designed for the AO4803 family. Final substitution should be validated against the specific suffix datasheet and the application's thermal and electrical margins.
Both devices are supplied in the SOIC-8 surface-mount package, with two P-channel MOSFETs in a single 8-pin body. The pinout follows the standard dual-MOSFET SOIC-8 arrangement, allowing drop-in compatibility on the same PCB land pattern.
Both parts are rated for 30 V drain-source voltage, ±20 V gate-source voltage, and 5 A continuous drain current per channel at 25 °C, with low RDS(on) suitable for load switching, level shifting, and power management in portable and consumer electronics.
These dual P-channel MOSFETs are suited to load switches, battery protection, power multiplexing, level shifting, and DC-DC converter circuits where a compact dual-device SOIC-8 solution with 30 V rating and low on-resistance is required.