Images à titre indicatif uniquement
WNSC2D16650CWQ
+NomenclatureDUAL SILICON CARBIDE SCHOTTKY DI
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FabricantSemi - conducteur renergique
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Pièce fabricant #WNSC2D16650CWQ
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Package TO-247-3
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En stock230
365 Garantie qualité 24h/24
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Spécifications
| Attribut | Valeur |
| Supplier | WeEn Semiconductors |
| Package / Case | Tube |
| Part Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified(Io)(per Diode) | 16A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
| Operating Temperature - Junction | 175°C |
| Mounting Type | Through Hole |
