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W29N01HVSINF
+NomenclatureIC FLASH 1GBIT 48-TSOP
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FabricantHuabang ÉLECTRONIQUE
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Pièce fabricant #W29N01HVSINF
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Fiche technique W29N01HVSINF DataSheet
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En stock3969
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Spécifications
| Attribut | Valeur |
| PartStatus | Active |
| BaseProductNumber | W29N01 |
| DigiKeyProgrammable | Verified |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NAND (SLC) |
| MemorySize | 1Gbit |
| MemoryOrganization | 128M x 8 |
| WriteCycleTime-Word,Page | 25ns |
| Voltage-Supply | 2.7V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package | 48-TFSOP (0.724", 18.40mm Width) |
| SupplierDevicePackage | 48-TSOP |
| Packaging | Tray |
| AccessTime | 25 ns |
Présentation
Description
Equivalent
1. Micron MT29F1G01 from Micron Technology
2. Samsung K9F1G08U0D from Samsung Electronics
3. Toshiba TC58NVG0S3HTA00 from Toshiba
4. H27U1G8F2B from SK Hynix
Check datasheets to ensure compatibility, as specific features and performance metrics may vary.
Features
Key features include:
1. High-Speed Performance: Offers rapid data transfer rates, improving overall system responsiveness.
2. Enhanced Endurance: SLC architecture ensures greater durability compared to multi-level cell (MLC) or triple-level cell (TLC) alternatives.
3. Reliability: Ideal for applications requiring frequent write and erase cycles.
4. Standard Interface: Compatible with common NAND interfaces, ensuring broad compatibility with various controllers.
5. Small Form Factor: Suitable for compact devices where space is limited.
6. Low Power Consumption: Efficient power usage, beneficial for battery-operated devices.
These features make the W29N01HVSINF a suitable choice for applications in industrial, automotive, and consumer electronics where performance and reliability are critical.
Pinout
Key functions of the W29N01HVSINF include:
- Data Storage: Offers 1Gb of storage capacity, which can be organized in pages and blocks for efficient data management.
- High-Speed Interface: Supports high-speed data transfer and efficient read/write operations.
- ECC Support: Implements Error Correction Code (ECC) to ensure data integrity.
- Wear Leveling: Helps in distributing the write/erase cycles evenly across the memory, enhancing endurance.
- Serial and Parallel Interface: Compatible with both serial and parallel interfaces for flexible integration into various systems.
The W29N01HVSINF is designed to meet the requirements of modern applications demanding reliable and durable memory solutions.
Manufacturer
Application
1. Consumer Electronics: Used in devices like smartphones, tablets, and digital cameras for storing operating systems, applications, and media.
2. Automotive Systems: Employed in infotainment systems, navigation, and advanced driver-assistance systems (ADAS).
3. Industrial Applications: Utilized in industrial automation equipment and IoT devices for data logging and firmware storage.
4. Computing: Integral in solid-state drives (SSDs) and as part of cache systems for faster data retrieval.
5. Networking: Used in routers and switches for firmware storage and configuration data.
These applications benefit from NAND flash memory's high density, durability, and ability to retain data without power.
Package
Frequently Asked Questions
Q: What is the storage capacity and organization of the W29N01HVSINF?
A: It offers 1Gbit density in a 128M x 8 organization, using SLC NAND flash technology for reliable non-volatile storage.
Q: What is the typical write cycle time per page?
A: The page write cycle time is 25ns, supporting efficient sequential programming operations for high-speed NAND applications.
Q: What voltage range does this device require?
A: The operating voltage is 2.7V to 3.6V, making it compatible with standard 3.3V logic systems.
Q: What is the operating temperature range?
A: It operates from -40°C to +85°C (TA), suitable for industrial-grade applications requiring extended thermal resilience.
Q: What package type is available for this part?
A: It comes in a 48-TFSOP (18.40mm width) package, with the supplier device package designated as 48-TSOP for surface mount assembly.
Q: Is the W29N01HVSINF a single-level cell (SLC) NAND?
A: Yes, it uses FLASH - NAND (SLC) technology, offering higher endurance and faster read/write performance compared to MLC or TLC NAND.
Q: What is the random access time for this memory?
A: The access time is 25 ns, ensuring quick read operations for sequential data retrieval scenarios.
Q: How is the device typically packaged for shipment?
A: It is supplied in a tray packaging format, which is standard for surface-mount NAND flash components in production volumes.