VNB35N07-E

The VNB35N07-E is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It is part of STMicroelectronics' VIPower series, known for integrating analog control, protection, and diagnostics features in a power package. The VNB35N07-E is specifically tailored for automotive applications, offering robustness, reliability, and precise control.
Key features include:
1. N-channel Enhancement Mode: This transistor type is designed to conduct electricity when a positive voltage is applied to its gate.

2. Low On-Resistance: The VNB35N07-E has low on-state resistance, minimizing power loss and improving efficiency.
3. Protection Features: It includes built-in protection mechanisms such as over-temperature shutdown, over-current protection, and ESD (Electrostatic Discharge) protection.
4. Diagnostic Feedback: The MOSFET provides diagnostic feedback, which is useful for fault detection and system reliability.
5. High Current Capability: It can handle significant current levels, making it suitable for driving inductive loads in automotive environments.
Overall, the VNB35N07-E is engineered for durability and efficiency, fulfilling demanding automotive and industrial power management requirements.

The VNB35N07-E is a fully protected power MOSFET. Equivalent products include similar N-channel MOSFETs with comparable voltage, current ratings, and protection features. Options could include the STMicroelectronics VND5E050AJ12TR, Infineon's BTS117, or Vishay's SI7450DP. Ensure to verify specific electrical characteristics and package compatibility to match your requirements.

The VNB35N07-E is a power MOSFET designed for automotive and other high-power applications. Key features include:
1. N-channel MOSFET: It utilizes an N-channel configuration that allows for efficient switching and conduction.

2. Voltage and Current Ratings: The device typically supports a maximum drain-source voltage (V_DS) of around 70V and a high current capacity, making it suitable for demanding environments.
3. Low On-resistance: The MOSFET is engineered to have low on-state resistance, minimizing power loss and improving efficiency during operation.
4. High-speed Performance: It offers fast switching speeds, which is beneficial for applications requiring quick response times.
5. Robust Construction: Designed to withstand harsh conditions, the VNB35N07-E is built to handle high temperatures and mechanical stress, making it ideal for automotive use.
6. Protection Features: It includes protection mechanisms such as overcurrent, overvoltage, and thermal shutdown to enhance reliability and prevent damage.
These features make the VNB35N07-E a versatile and robust choice for power management in automotive and industrial sectors.

The VNB35N07-E is a monolithic high-side smart power switch from STMicroelectronics. It is designed for automotive applications and provides protection and diagnostics features. The device typically comes in a D2PAK package with a total of 3 pins:
1. Output (OUT): This is the main output pin connected to the load. It handles the load current and provides protection features such as short-circuit protection.
2. Input (IN): This pin is used to control the device. A high signal on this pin turns the switch on, allowing current to flow from the supply to the load through the OUT pin.
3. Supply (VCC): This pin is connected to the positive supply voltage. It powers the internal circuitry of the device.
The VNB35N07-E is designed to handle up to 35A of continuous current, with a maximum operating voltage of 70V. It integrates over-temperature, over-current, and over-voltage protection features, making it suitable for use in harsh automotive environments.

The VNB35N07-E is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductor products and applications. The company serves various sectors, including automotive, industrial, personal electronics, and communications equipment. STMicroelectronics is known for producing a wide array of electronic components, including microcontrollers, memory devices, sensors, and power management systems. With a focus on innovation and sustainability, the company aims to provide solutions that address the evolving needs of technology and its applications.

The VNB35N07-E is a power MOSFET designed for high-current, low-voltage applications. It is commonly used in automotive electronic systems for driving inductive loads like motors, solenoids, and relays, as well as in switching applications due to its low on-state resistance. Additionally, it is suitable for use in industrial automation systems, power management circuits, and other consumer electronics that require efficient power switching and control. Its robustness and reliability make it ideal for applications that demand high current handling and thermal performance.

The VNB35N07-E is typically packaged in a TO-263 (D2PAK) surface-mount package.