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UMH11NTN
+NomenclatureTRANS 2NPN PREBIAS 0.15W UMT6
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FabricantROM
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Pièce fabricant #UMH11NTN
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Fiche technique UMH11NTN DataSheet
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Package SC-88
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En stock14373
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Spécifications
| Attribut | Valeur |
| Supplier | Rohm Semiconductor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Current - Collector(Ic)(Max) | 100mA |
| Voltage - Collector Emitter Breakdown(Max) | 50V |
| Resistor - Base(R1) | 10kOhms |
| Resistor - Emitter Base(R2) | 10kOhms |
| DC Current Gain(h FE)(Min) @ Ic Vce | 30 @ 5mA, 5V |
| Vce Saturation(Max) @ Ib Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff(Max) | 500nA |
| Frequency - Transition | 250MHz |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
Présentation
Description
If UMH11NTN refers to a piece of equipment, it would typically include information about its specifications, capabilities, and usage guidelines in its documentation. For instance, if it's an electronic device, details might include power requirements, connectivity options, and operational features.
To give a more precise introduction, additional context about the industry or the type of product related to UMH11NTN would be necessary. If you have access to the product's manual or a manufacturer's website, you can often find detailed information there.
Equivalent
1. BC847BS - Dual NPN transistor array with similar characteristics.
2. BC846B - Single NPN transistor, use two for equivalent functionality.
3. MMBT3904 - Single NPN transistor, use two for similar applications.
4. 2N7002DW - While primarily MOSFETs, they are sometimes used in similar applications.
Always verify specifications to ensure compatibility with your specific requirements.
Features
1. Bearing Type: It is designed for high-precision applications, offering a combination of high-speed capabilities and axial load support in one direction.
2. Contact Angle: Typically features a contact angle that allows it to withstand significant axial loads alongside radial loads.
3. Material: Constructed using high-grade steel or ceramic materials for durability and performance under stress.
4. Sealing: Available with seals or shields to protect from contamination and retain lubrication, enhancing lifespan and reliability.
5. Cage Design: Incorporates a robust cage design to facilitate even load distribution and reduce friction.
6. Precision: Often manufactured to tight tolerances, ensuring high precision and stability in demanding applications.
7. Applications: Ideal for use in machinery where high rotational speeds and precise axial and radial alignment are critical, such as in motorsport, aerospace, and industrial machinery.
8. Mounting: Generally easy to install with a press fit, minimizing downtime during maintenance or replacement.
These features make the UMH11NTN suitable for high-performance environments requiring reliable and efficient operation.
Pinout
Pin Configuration:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): Source terminal for the first N-channel MOSFET.
3. Drain 2 (D2): Drain terminal for the second N-channel MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): Source terminal for the second N-channel MOSFET.
6. Drain 1 (D1): Drain terminal for the first N-channel MOSFET.
These MOSFET transistors are typically used in applications requiring small signal and low voltage switching. The dual configuration allows for compact designs where two MOSFETs are needed.