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TT8U2TCR
+NomenclatureMOSFET P-CH 20V 2.4A 8TSST
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FabricantROM
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Pièce fabricant #TT8U2TCR
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Fiche technique TT8U2TCR DataSheet
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Spécifications
| Attribut | Valeur |
| Supplier | Rohm Semiconductor |
| Package / Case | Tape & Reel (TR) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 2.4A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 105mOhm @ 2.4A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 6.7 nC @ 4.5 V |
| Vgs(Max) | ±10V |
| Input Capacitance(Ciss)(Max) @ Vds | 850 pF @ 10 V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.25W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSST |
