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TPS51116PWPR
+NomenclatureIC REG CTRLR DDR 1OUT 20HTSSOP
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FabricantTexas Instruments
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Pièce fabricant #TPS51116PWPR
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Package HTSSOP-20
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En stock3038
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| Applications | Controller, DDR |
| Voltage - Input | 3V ~ 28V |
| Number of Outputs | 1 |
| Voltage - Output | 1.2V, 1.35V, 1.5V, 1.8V, 2.5V, Adj |
| Operating Temperature | -40°C ~ 85°C |
| Mounting Type | Surface Mount |
Présentation
Description
Key features include a wide input voltage range, typically from 2.7V to 5.5V, which allows it to be used with a variety of power sources. The TPS51116PWPR also supports power-saving modes, such as skip mode, to enhance efficiency during light-load conditions. It includes an adjustable output voltage feature, allowing precise voltage regulation tailored to specific application requirements.
The controller is housed in a compact TSSOP-14 package, suitable for space-constrained designs. Its protection features, such as overcurrent protection and thermal shutdown, ensure reliable operation and protect against potential damage. Overall, the TPS51116PWPR is valued for its efficiency, flexibility, and reliability in managing power for DDR memory and related components.
Equivalent
1. ISL6236 from Renesas: Offers similar functionality for DDR applications.
2. RT8206 from Richtek: Provides comparable features for power management.
3. APW7313 from Anpec: Another DDR power solution with similar specifications.
4. IR3570 from Infineon: Can be used for DDR power management with similar capabilities.
Always verify specific requirements and compatibility with your design before selecting a replacement.
Features
1. Input Voltage Range: It supports a wide input voltage range, typically from 3 V to 28 V, making it versatile for various applications.
2. Output Voltage: The device can generate two independent output voltages, essential for providing the necessary VDDQ and VTT voltages required by DDR memory systems.
3. VTT Output: It features a VTT output that tracks VDDQ/2, ensuring precise memory termination voltage.
4. Efficiency: The device is designed for high efficiency with low RDS(on) MOSFETs.
5. Built-in MOSFET Drivers: It includes integrated MOSFET drivers to simplify design and improve performance.
6. Programmable Switching Frequency: The switching frequency can be adjusted to optimize the power supply design.
7. Soft-Start and Power Good: It provides soft-start functionality and a power-good signal to ensure smooth power-up sequencing.
8. Protections: Features such as overcurrent protection, thermal shutdown, and undervoltage lockout enhance system reliability.
These features make the TPS51116PWPR ideal for powering DDR memory in laptops, desktops, and various other computing systems.
Pinout
Here's a brief overview of its pin functions:
1. VIN: Input voltage supply.
2. EN: Enable pin to turn the device on/off.
3. FB: Feedback input for output voltage regulation.
4. COMP: Compensation pin for stabilizing the control loop.
5. SS: Soft-start control pin.
6. PGOOD: Power good indicator.
7. VDDQ: Output voltage for DDR memory.
8. VTT: Termination voltage output.
9. VTTREF: Reference voltage output for VTT.
10. GND: Ground connection.
11. PHASE: Connects to the switching node.
12. SW: Switching node for connecting an inductor.
13. BOOT: Bootstrap capacitor connection for high-side driver.
14. LGATE: Low-side gate drive output.
15. UGATE: High-side gate drive output.
16. VREF: Reference voltage input.
17. MODE: Mode selection pin.
18. SS_TR: Soft-start tracking input.
19. VDDQSNS: Sense input for VDDQ.
20. VTT_SNS: Sense input for VTT.
These pins support efficient power management for DDR memory applications. Always refer to the official datasheet for detailed and specific information.