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TK8P60W,RVQ
+NomenclatureMOSFET N CH 600V 8A DPAK
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FabricantToshiba Semiconductor et stockage
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Pièce fabricant #TK8P60W,RVQ
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Fiche technique TK8P60W,RVQ DataSheet
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Spécifications
| Attribut | Valeur |
| Supplier | Toshiba Semiconductor and Storage |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | DTMOSIV |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 8A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 500mOhm @ 4A, 10V |
| Vgs(th)(Max) @ Id | 3.7V @ 400µA |
| Gate Charge(Qg)(Max) @ Vgs | 18.5 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 570 pF @ 300 V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 80W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
