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SVD2955T4G
+NomenclatureMOSFET P-CH 60V 12A DPAK
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FabricantSemi - conducteurs
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Pièce fabricant #SVD2955T4G
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Package DPAK-4
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En stock6726
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 12A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 180mOhm @ 6A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 30 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 750 pF @ 25 V |
| PowerDissipation(Max) | 55W (Tj) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Présentation
Description
When dealing with any such component, it is crucial to refer to the manufacturer's datasheet for detailed specifications, including electrical characteristics, pin configurations, typical applications, and any relevant handling precautions. The datasheet provides the necessary information to ensure proper integration and functioning within a circuit. If you are working on a project or repair, confirming the part's compatibility with your specific requirements is essential. For the most accurate information, checking with the manufacturer or a reputable electronics distributor is recommended.
Equivalent
1. IRF9540 from Infineon Technologies
2. FQP27P06 from ON Semiconductor
3. STP55PF06 from STMicroelectronics
4. FDP6035P from Fairchild Semiconductor
These equivalents have similar voltage and current characteristics, but always check the datasheets for precise specifications to ensure compatibility with your application.
Features
1. Low Forward Voltage Drop: Enhances efficiency by reducing power loss during conduction.
2. Fast Switching Speed: Ideal for high-frequency applications, improving performance and efficiency in switching circuits.
3. High Surge Capability: Can handle large current surges, making it suitable for power supply applications.
4. Guard Ring Protection: Enhances reliability by providing protection against voltage spikes.
5. Compact Packaging: Typically available in small surface-mount packages, which is beneficial for space-constrained designs.
6. Wide Operating Temperature Range: Suitable for various environmental conditions, allowing use in diverse applications.
7. Low Reverse Leakage Current: Reduces power loss in reverse bias mode, important for battery-powered devices.
These features make the SVD2955T4G suitable for applications like power supplies, DC-DC converters, and as a rectifier in various electronic devices.
Pinout
1. Gate (G): This pin is responsible for controlling the MOSFET's switching operation. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the pin through which the main current flows from the circuit into the MOSFET. It's connected to the load in the typical circuit configuration.
3. Source (S): This pin is the return path for the current flowing from the drain. It's typically connected to the ground or the negative side of the power supply in circuits.
Additionally, there is a metal tab connected to the drain pin, which helps in heat dissipation. The SVD2955T4G is used in applications requiring electronic switching and amplification, mainly due to its efficiency and fast switching capabilities.
Manufacturer
Application
1. Power Supply Units: Enhances efficiency in DC-DC converters.
2. Motor Drives: Used in controlling speed and direction in motor applications.
3. LED Lighting: Manages power delivery for LED systems.
4. Battery-Powered Devices: Optimizes power consumption in portable electronics.
5. Switching Regulators: Improves performance in voltage regulation circuits.
6. Load Switches: Used in on/off control of power loads.
Its low on-resistance and efficient thermal management make it suitable for high-frequency applications.