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SUM90N10-8M2P-E3
+NomenclatureMOSFET N-CH 100V 90A TO263
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FabricantSiliconix
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Pièce fabricant #SUM90N10-8M2P-E3
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Fiche technique SUM90N10-8M2P-E3 DataSheet
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Package TO-263-3
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En stock5041
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 90A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 8.2mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 150 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 6290 pF @ 50 V |
| Power Dissipation (Max) | 3.75W (Ta), 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D²Pak) |
Présentation
Description
The naming convention typically includes information about the device's specifications or manufacturer identifiers. For instance:
- "SUM" might denote the series or manufacturer.
- "90N10" could refer to specific performance characteristics, such as voltage or current ratings.
- "8M2P" might indicate package type or additional electrical characteristics.
- "E3" could signify environmental or lead-free status.
It's essential to refer to the manufacturer's datasheet for accurate details regarding the device's specifications, pin configuration, and applications. These datasheets provide comprehensive technical information necessary for integrating the component into electronic circuits. If you're working with or selecting this component, ensure it meets the requirements of your specific application, considering factors like voltage, current, heat dissipation, and package type.
Equivalent
Features
1. Voltage Rating: It typically has a drain-to-source voltage (V_DS) rating of 100V.
2. Current Capacity: The device can handle a continuous drain current (I_D) of approximately 90A.
3. Low On-Resistance: The MOSFET features low on-state resistance, improving efficiency by reducing power loss.
4. Fast Switching: It supports rapid switching speeds, making it suitable for high-frequency applications.
5. Thermal Performance: The package is designed for efficient heat dissipation, often in a TO-220 or similar form factor.
6. Protection Features: Some variants may include built-in protection against over-voltage and over-current conditions.
7. Applications: It is commonly used in power supplies, motor control, DC-DC converters, and other power management systems.
These features make the SUM90N10-8M2P-E3 a versatile choice for various electronic designs requiring efficient power handling and high reliability.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET can be turned on or off, allowing current to flow between the drain and source.
2. Drain (D): The drain is the pin through which the main current flows into the device when it is in the on state.
3. Source (S): The source is the pin through which the current exits the device.
This MOSFET is designed for high-efficiency and high-current applications, featuring a low on-state resistance and fast switching capabilities, making it suitable for use in power supplies, DC-DC converters, and other power management systems.
Manufacturer
Application
1. Power Supply Units: Used for synchronous rectification and power conversion.
2. Motor Control: Suitable for driving motors in industrial and automotive systems.
3. DC-DC Converters: Helps in efficient power conversion in portable electronics.
4. Battery Management Systems: Used in managing charging and discharging processes.
5. Switching Applications: Suitable for use in high-frequency switching circuits.
Its features such as low on-resistance and high-speed switching make it ideal for these applications, enhancing overall system efficiency and performance.