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STY60NM60
+NomenclatureMOSFET N-CH 600V 60A MAX247
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FabricantSemi - conducteurs optiques
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Pièce fabricant #STY60NM60
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Fiche technique STY60NM60 DataSheet
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Package TO-247-3
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En stock7567
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Spécifications
| Attribut | Valeur |
| Package | Tube |
| Series | MDmesh™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 60A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 55mOhm @ 30A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 266 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 7300 pF @ 25 V |
| PowerDissipation(Max) | 560W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | MAX247™ |
Présentation
Description
This MOSFET is typically used in various applications such as power supplies, motor controllers, and other electronic devices that require efficient power management. Its low on-state resistance (R_ds(on)) minimizes power loss and heat generation, increasing the overall efficiency of the device. The STY60NM60 also features a fast switching speed, which contributes to reduced switching losses and enhanced performance in high-frequency applications.
Overall, the STY60NM60 provides a reliable and efficient solution for engineers and designers looking to optimize power management systems in their projects.
Equivalent
1. Infineon IPP60R099CP: Comparable Rds(on) and voltage ratings.
2. Fairchild FDP33N25: Similar power handling and switching characteristics.
3. Vishay SiHP33N60E: Equivalent voltage and current ratings.
Ensure to verify specific parameters like Rds(on), Vgs, and package type when selecting an equivalent. Always consult datasheets for compatibility.
Features
1. N-Channel MOSFET: It is an N-channel type, which typically offers higher electron mobility and faster switching speed compared to P-channel counterparts.
2. Voltage and Current Ratings: The STY60NM60 can handle a drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications. It also supports a continuous drain current (I_D) of 60A.
3. R_DS(on) Resistance: It has a low on-state resistance, which minimizes power loss during operation and improves efficiency.
4. Fast Switching: The device is designed for fast switching, which is beneficial in applications like power supplies and motor control where quick transition between on and off states is critical.
5. Robust Construction: The MOSFET is built to withstand high levels of stress, offering reliability in demanding environments.
6. Applications: It is commonly used in power conversion, motor drives, and other industrial applications that require efficient power management.
These features make the STY60NM60 a versatile component in high-power and high-frequency applications.
Pinout
1. Gate (G) - Used to control the flow of current between the drain and the source. A voltage applied here turns the MOSFET on or off.
2. Drain (D) - The terminal through which the main current enters the MOSFET when it is in the "on" state.
3. Source (S) - The terminal through which the main current exits the MOSFET.
This MOSFET is often used in power switching applications due to its capability to handle high voltages and currents.
Manufacturer
Application
1. Power Supplies: Used in SMPS (Switched-Mode Power Supplies) for efficient power conversion.
2. Motor Control: Applicable in motor drivers for industrial and consumer electronics.
3. Inverters: Employed in inverter circuits for renewable energy systems.
4. Automotive: Utilized in automotive electronic systems for load switching.
5. Telecommunications: Applied in base stations and network infrastructure for efficient power management.
6. Lighting: Used in LED drivers and lighting control systems for energy-efficient lighting solutions.
Its robust performance in handling high currents and voltages makes it suitable for these demanding applications.