STY60NM60

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STY60NM60

+Nomenclature

MOSFET N-CH 600V 60A MAX247

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Spécifications

Attribut Valeur
Package Tube
Series MDmesh™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 55mOhm @ 30A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 266 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 7300 pF @ 25 V
PowerDissipation(Max) 560W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage MAX247™

Présentation

Description

The STY60NM60 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency and high-speed switching applications. It is part of the STMicroelectronics family of semiconductors. Key features of the STY60NM60 include a maximum drain-source voltage (V_ds) of 600V and a continuous drain current (I_d) of 60A, making it suitable for handling significant power loads.
This MOSFET is typically used in various applications such as power supplies, motor controllers, and other electronic devices that require efficient power management. Its low on-state resistance (R_ds(on)) minimizes power loss and heat generation, increasing the overall efficiency of the device. The STY60NM60 also features a fast switching speed, which contributes to reduced switching losses and enhanced performance in high-frequency applications.
Overall, the STY60NM60 provides a reliable and efficient solution for engineers and designers looking to optimize power management systems in their projects.

Equivalent

The STY60NM60 is a N-channel MOSFET with specific electrical characteristics. Equivalent products with similar specifications might include:
1. Infineon IPP60R099CP: Comparable Rds(on) and voltage ratings.
2. Fairchild FDP33N25: Similar power handling and switching characteristics.
3. Vishay SiHP33N60E: Equivalent voltage and current ratings.
Ensure to verify specific parameters like Rds(on), Vgs, and package type when selecting an equivalent. Always consult datasheets for compatibility.

Features

The STY60NM60 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. Here are its key features:
1. N-Channel MOSFET: It is an N-channel type, which typically offers higher electron mobility and faster switching speed compared to P-channel counterparts.
2. Voltage and Current Ratings: The STY60NM60 can handle a drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications. It also supports a continuous drain current (I_D) of 60A.
3. R_DS(on) Resistance: It has a low on-state resistance, which minimizes power loss during operation and improves efficiency.
4. Fast Switching: The device is designed for fast switching, which is beneficial in applications like power supplies and motor control where quick transition between on and off states is critical.
5. Robust Construction: The MOSFET is built to withstand high levels of stress, offering reliability in demanding environments.
6. Applications: It is commonly used in power conversion, motor drives, and other industrial applications that require efficient power management.
These features make the STY60NM60 a versatile component in high-power and high-frequency applications.

Pinout

The STY60NM60 is an N-channel MOSFET designed for high-power applications. It typically comes in a TO-247 package, which has three pins. The pin configuration and functions are as follows:
1. Gate (G) - Used to control the flow of current between the drain and the source. A voltage applied here turns the MOSFET on or off.
2. Drain (D) - The terminal through which the main current enters the MOSFET when it is in the "on" state.
3. Source (S) - The terminal through which the main current exits the MOSFET.
This MOSFET is often used in power switching applications due to its capability to handle high voltages and currents.

Manufacturer

The STY60NM60 is manufactured by STMicroelectronics. STMicroelectronics is a multinational electronics and semiconductor manufacturer. It is a leading company in the design and production of a wide range of semiconductor devices, including integrated circuits, discrete components, and microelectronics. Headquartered in Geneva, Switzerland, the company operates globally with manufacturing sites, design centers, and sales offices worldwide. STMicroelectronics serves various markets, including automotive, industrial, personal electronics, and communication equipment, providing innovative solutions and technologies to enhance electronic applications.

Application

The STY60NM60 is a N-channel MOSFET used primarily for high-power and high-speed switching applications. Its application areas include:
1. Power Supplies: Used in SMPS (Switched-Mode Power Supplies) for efficient power conversion.
2. Motor Control: Applicable in motor drivers for industrial and consumer electronics.
3. Inverters: Employed in inverter circuits for renewable energy systems.
4. Automotive: Utilized in automotive electronic systems for load switching.
5. Telecommunications: Applied in base stations and network infrastructure for efficient power management.
6. Lighting: Used in LED drivers and lighting control systems for energy-efficient lighting solutions.
Its robust performance in handling high currents and voltages makes it suitable for these demanding applications.

Package

The STY60NM60 is a power MOSFET, and it typically comes in a TO-247 package. The TO-247 package is designed for high power applications and provides efficient heat dissipation.