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STW48NM60N
+NomenclatureMOSFET N-CH 600V 44A TO247
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FabricantSemi - conducteurs optiques
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Pièce fabricant #STW48NM60N
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Fiche technique STW48NM60N DataSheet
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Package TO-247-3
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En stock5952
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Spécifications
| Attribut | Valeur |
| Package | Tube |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 44A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 70mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 124 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 4285 pF @ 50 V |
| PowerDissipation(Max) | 330W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
Présentation
Description
Key features of the STW48NM60N include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 40A, which allows it to handle substantial power levels.
2. Low On-Resistance: The MOSFET offers a low on-state resistance (R_DS(on)) of around 0.033 ohms, which minimizes power loss and heat generation.
3. High Switching Speed: Its fast switching capabilities enable high-frequency operation, enhancing efficiency in various applications.
4. Ruggedness: The device is designed to withstand high energy and thermal conditions, ensuring reliability in challenging environments.
Overall, the STW48NM60N is ideal for applications requiring high efficiency and reliability.
Equivalent
1. IRFP460: 500V, 20A, TO-247 package.
2. IXFH50N60: 600V, 50A, TO-247 package.
3. FQA48N50: 500V, 48A, TO-3P package.
It's essential to verify the exact specifications and package requirements to ensure compatibility in your application.
Features
1. Voltage and Current Ratings: It is capable of handling a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 48A.
2. Low On-Resistance: This MOSFET offers a low R_DS(on), typically enhancing its efficiency by minimizing power loss during conduction.
3. Fast Switching: Designed for rapid switching, this feature makes it suitable for applications requiring high-speed operation.
4. Ruggedness: It has high avalanche energy and dv/dt capability, ensuring robust performance under challenging electrical conditions.
5. Package Type: The device is available in a TO-247 package, which provides good heat dissipation characteristics, important for high-power applications.
6. Applications: Commonly used in applications like switch mode power supplies (SMPS), DC-DC converters, and industrial power systems.
These features make the STW48NM60N suitable for efficient power management in various demanding applications.
Pinout
1. Gate (G): This is the control pin, where the voltage is applied to turn the MOSFET on or off.
2. Drain (D): This pin is connected to the main current-carrying part of the circuit. When the MOSFET is on, current flows from the drain to the source.
3. Source (S): This is the return path for the current entering through the drain.
The STW48NM60N is designed for high-efficiency switching applications. It offers features such as a low on-state resistance, high-speed switching, and capability to handle significant power loads, making it suitable for power conversion and management applications.
Manufacturer
Application
1. Power Supplies: Used in switched-mode power supplies (SMPS) for computers, televisions, and other electronics.
2. Motor Control: Utilized in motor drivers for industrial and consumer applications.
3. Inverters: Applied in inverters for solar power systems and uninterruptible power supplies (UPS).
4. Lighting: Used in LED and HID lighting ballast circuits.
5. Battery Management: Part of battery protection and management systems in electric vehicles and portable devices.
Its features like low on-resistance and high-speed switching make it suitable for high-efficiency and high-frequency applications.