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STP8N120K5
+NomenclatureMOSFET N-CH 1200V 6A TO220
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FabricantSemi - conducteurs optiques
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Pièce fabricant #STP8N120K5
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Fiche technique STP8N120K5 DataSheet
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En stock7767
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Spécifications
| Attribut | Valeur |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ K5 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2Ohm @ 2.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 13.7 nC @ 10 V |
| InputCapacitance(Ciss)(Max)@Vds | 505 pF @ 100 V |
| PowerDissipation(Max) | 130W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
Présentation
Description
The STP8N120K5 is a high-voltage power MOSFET produced by STMicroelectronics. It belongs to the MDmesh™ K5 series, known for its efficiency and performance in high-voltage applications. This particular model features an N-channel configuration and is designed to handle a maximum drain-source voltage (V_DS) of 1200 volts, making it suitable for demanding applications such as power supplies, converters, and lighting systems.
Key specifications include a continuous drain current (I_D) of 7.5 amperes and a gate threshold voltage (V_GS(th)) range typically between 3 to 5 volts. The STP8N120K5 is optimized for low on-resistance (R_DS(on)), which enhances efficiency by minimizing power loss during operation.
The MOSFET is packaged in a TO-220 form, facilitating easy mounting and good thermal management. It is also designed to offer robustness against voltage spikes and stresses, making it reliable for long-term use in industrial environments. Overall, the STP8N120K5 offers a balance of high voltage handling, efficiency, and reliability, making it a versatile choice for various electronic applications.
Key specifications include a continuous drain current (I_D) of 7.5 amperes and a gate threshold voltage (V_GS(th)) range typically between 3 to 5 volts. The STP8N120K5 is optimized for low on-resistance (R_DS(on)), which enhances efficiency by minimizing power loss during operation.
The MOSFET is packaged in a TO-220 form, facilitating easy mounting and good thermal management. It is also designed to offer robustness against voltage spikes and stresses, making it reliable for long-term use in industrial environments. Overall, the STP8N120K5 offers a balance of high voltage handling, efficiency, and reliability, making it a versatile choice for various electronic applications.
Equivalent
The STP8N120K5 is a 1200V, 8A N-channel MOSFET manufactured by STMicroelectronics. Equivalent products with similar specifications may include:
1. IRFP460 from Infineon Technologies
2. IXFH8N120P from IXYS/Littelfuse
3. FDPF8N50NZ from ON Semiconductor
4. APT8024BN from Microsemi
While these alternatives have similar voltage and current ratings, it's critical to verify other parameters like gate charge, Rds(on), and package type to ensure full compatibility with your specific application.
1. IRFP460 from Infineon Technologies
2. IXFH8N120P from IXYS/Littelfuse
3. FDPF8N50NZ from ON Semiconductor
4. APT8024BN from Microsemi
While these alternatives have similar voltage and current ratings, it's critical to verify other parameters like gate charge, Rds(on), and package type to ensure full compatibility with your specific application.
Features
The STP8N120K5 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It features a breakdown voltage of 1200V and a continuous drain current of 7.8A. This device is known for its low on-resistance, which enhances efficiency and performance. It also includes fast switching capabilities, making it suitable for advanced electronic applications, such as power supplies and converters.
Additionally, the STP8N120K5 has a high-speed intrinsic diode and is designed to handle high temperatures, providing robustness in various environments. Its TO-220 package allows for efficient heat dissipation. This MOSFET is commonly used in applications requiring high voltage and efficiency, including industrial equipment, lighting systems, and motor drives. Its combination of features makes it a versatile choice for engineers looking for reliable high-voltage components.
Additionally, the STP8N120K5 has a high-speed intrinsic diode and is designed to handle high temperatures, providing robustness in various environments. Its TO-220 package allows for efficient heat dissipation. This MOSFET is commonly used in applications requiring high voltage and efficiency, including industrial equipment, lighting systems, and motor drives. Its combination of features makes it a versatile choice for engineers looking for reliable high-voltage components.
Pinout
The STP8N120K5 is an N-channel MOSFET from STMicroelectronics. It typically comes in a TO-220 package, which has three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET is turned on, allowing current to flow between the drain and source.
2. Drain (D): This is the pin where the current flows out of the transistor. The drain is connected to the load in most applications.
3. Source (S): This is the pin through which current enters the transistor. The source is usually connected to ground in many applications.
The STP8N120K5 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 1200V and a continuous drain current of 8A at 25°C. It’s typically used in power management applications, including switching power supplies and motor control circuits, due to its high efficiency and fast switching capabilities.
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET is turned on, allowing current to flow between the drain and source.
2. Drain (D): This is the pin where the current flows out of the transistor. The drain is connected to the load in most applications.
3. Source (S): This is the pin through which current enters the transistor. The source is usually connected to ground in many applications.
The STP8N120K5 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 1200V and a continuous drain current of 8A at 25°C. It’s typically used in power management applications, including switching power supplies and motor control circuits, due to its high efficiency and fast switching capabilities.
Manufacturer
The STP8N120K5 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a broad range of products. These products include integrated circuits (ICs) and discrete devices that are used in various applications across different industries, such as automotive, industrial, personal electronics, communications equipment, and more. The company is known for its expertise in areas like microcontrollers, sensors, power management, and digital and mixed-signal ICs. STMicroelectronics is a key player in the semiconductor industry, providing solutions that enable smarter driving, smarter factories, smarter cities, and more energy-efficient products.
Application
The STP8N120K5 is a power MOSFET commonly used in high-voltage applications due to its 1200V capability. Application areas include:
1. Switching Power Supplies: It is utilized in power converters and inverters for efficient energy conversion.
2. Industrial Automation: Used in motor drives and control systems for industrial machinery.
3. Lighting: Suitable for high-intensity discharge and LED lighting systems.
4. Renewable Energy Systems: Employed in solar inverters and wind turbine electronics.
5. Telecommunications: Used in power management circuits for telecom equipment.
6. Home Appliances: Incorporated in circuits needing high voltage handling, like microwave ovens.
Its high voltage and current capabilities make it versatile for various high-power electronic applications.
1. Switching Power Supplies: It is utilized in power converters and inverters for efficient energy conversion.
2. Industrial Automation: Used in motor drives and control systems for industrial machinery.
3. Lighting: Suitable for high-intensity discharge and LED lighting systems.
4. Renewable Energy Systems: Employed in solar inverters and wind turbine electronics.
5. Telecommunications: Used in power management circuits for telecom equipment.
6. Home Appliances: Incorporated in circuits needing high voltage handling, like microwave ovens.
Its high voltage and current capabilities make it versatile for various high-power electronic applications.
Package
The STP8N120K5 is a N-channel power MOSFET by STMicroelectronics, housed in a TO-220 package. This package type is commonly used for through-hole mounting and provides effective heat dissipation for power applications.
