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STL100N10F7
+NomenclatureMOSFET N-CH 100V 80A POWERFLAT
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FabricantSemi - conducteurs optiques
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Pièce fabricant #STL100N10F7
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Fiche technique STL100N10F7 DataSheet
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En stock11991
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Spécifications
| Attribut | Valeur |
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | DeepGATE™, STripFET™ VII |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 7.3mOhm @ 19A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 80 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5680 pF @ 50 V |
| PowerDissipation(Max) | 5W (Ta), 100W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerFlat™ (5x6) |
Présentation
Description
This MOSFET is housed in a PowerFLAT 5x6 package, which is optimized for better thermal performance and space-saving in PCB designs. The device's architecture supports fast switching speeds, contributing to reduced switching losses and improved overall performance. The STL100N10F7 is commonly utilized in automotive, industrial, and consumer electronics sectors, offering reliable performance even under demanding conditions. Its robust design ensures durability, making it a popular choice for engineers working with power-sensitive and efficiency-critical applications.
Equivalent
1. IRF3205 - another N-channel MOSFET with similar voltage and current ratings.
2. FDP8870 - a Fairchild Semiconductor N-channel MOSFET with comparable specifications.
3. IPB107N15N3 G - an Infineon MOSFET with similar characteristics.
4. NTP125N10G - an ON Semiconductor N-channel MOSFET.
Always verify specific parameters like voltage, current, Rds(on), and package compatibility when selecting equivalents.
Features
1. Voltage and Current Ratings: It has a maximum drain-to-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 100A, making it suitable for high-power applications.
2. Low On-Resistance: The MOSFET features a low on-resistance (R_DS(on)), typically around 7.2 mΩ at 10V gate-source voltage, which minimizes conduction losses and improves efficiency.
3. Fast Switching: It offers fast switching performance, essential for high-frequency applications, due to its low gate charge (Q_g).
4. Package: The device is typically housed in a D²PAK package, which provides good thermal performance and ease of mounting on a PCB.
5. Thermal Performance: It is designed for efficient heat dissipation, allowing it to handle high power levels without excessive temperature rise.
6. Applications: Commonly used in power management, DC-DC converters, motor control, and various other industrial applications.
These features make the STL100N10F7 a robust choice for high-efficiency and high-reliability power electronic systems.
Pinout
1. Pins 1, 2, 3: Source terminals (all connected internally).
2. Pin 4: Gate terminal.
3. Pins 5, 6, 7, 8: Drain terminals (all connected internally).
The primary function of this MOSFET is to act as an electronic switch or amplifier in power management applications. It is known for its low on-resistance, high-speed switching, and robust performance in power conversion circuits. The STL100N10F7 is used in applications such as DC-DC converters, motor drives, and other high-efficiency power systems.
Manufacturer
Application
1. Power Supplies: Utilized in DC-DC converters and SMPS for efficient power conversion.
2. Motor Control: Employed in motor drivers for automotive or industrial applications to control speed and torque.
3. Battery Management: Used in battery protection circuits and management systems for efficient energy use.
4. Load Switching: Suitable for switching high-power loads in applications like LED drivers and lighting controls.
Its low on-resistance and high current capability make it ideal for these high-efficiency power applications.