Images à titre indicatif uniquement
STH180N10F3-6
+NomenclatureMOSFET N-CH 100V 180A H2PAK-6
-
FabricantSemi - conducteurs optiques
-
Pièce fabricant #STH180N10F3-6
-
Fiche technique STH180N10F3-6 DataSheet
-
En stock3726
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | STMicroelectronics |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | STripFET™ III |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 180A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 4.5mOhm @ 60A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 114.6 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 6665 pF @ 25 V |
| Power Dissipation (Max) | 315W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | H2PAK-6 |
