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STGP10NC60KD
+NomenclatureIGBT 600V 20A TO-220
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FabricantSemi - conducteurs optiques
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Pièce fabricant #STGP10NC60KD
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Fiche technique STGP10NC60KD DataSheet
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En stock3689
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Spécifications
| Attribut | Valeur |
| Series | PowerMESH™ |
| PartStatus | Active |
| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
| Current-Collector(Ic)(Max) | 20 A |
| Vce(on)(Max)@Vge,Ic | 2.5V @ 15V, 5A |
| Power-Max | 65 W |
| SwitchingEnergy | 55µJ (on), 85µJ (off) |
| InputType | Standard |
| GateCharge | 19 nC |
| Td(on/off)@25°C | 17ns/72ns |
| TestCondition | 390V, 5A, 10Ohm, 15V |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-220-3 |
| SupplierDevicePackage | TO-220 |
| BaseProductNumber | STGP10 |
| Current-CollectorPulsed(Icm) | 30 A |
| ReverseRecoveryTime(trr) | 22 ns |
Présentation
Description
The STGP10NC60KD is a high-voltage N-channel MOSFET designed for various power applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 10A at a case temperature of 25°C. This component is particularly valued for its low on-state resistance (R_DS(on)), which enhances efficiency by reducing power losses during operation.
The MOSFET is typically used in switch-mode power supplies, motor drivers, and other high-frequency applications. With fast switching capabilities, it minimizes transition losses, making it suitable for energy-efficient designs.
The device is housed in a TO-220 package, allowing for effective thermal management. Its robust construction and high-voltage tolerance make it an ideal choice for demanding environments.
Applications include industrial equipment, renewable energy systems, and consumer electronics, where reliability and performance are critical. Overall, the STGP10NC60KD is an essential component for engineers seeking reliability in high-voltage applications.
The MOSFET is typically used in switch-mode power supplies, motor drivers, and other high-frequency applications. With fast switching capabilities, it minimizes transition losses, making it suitable for energy-efficient designs.
The device is housed in a TO-220 package, allowing for effective thermal management. Its robust construction and high-voltage tolerance make it an ideal choice for demanding environments.
Applications include industrial equipment, renewable energy systems, and consumer electronics, where reliability and performance are critical. Overall, the STGP10NC60KD is an essential component for engineers seeking reliability in high-voltage applications.
Equivalent
The STGP10NC60KD is a 600V, 10A N-channel MOSFET. Equivalent products include:
1. IRF840
2. FQP13N60
3. FET 10N60
4. SPT10N60
Always verify specifications such as Rds(on), gate threshold voltage, and overall package compatibility before substitution.
1. IRF840
2. FQP13N60
3. FET 10N60
4. SPT10N60
Always verify specifications such as Rds(on), gate threshold voltage, and overall package compatibility before substitution.
Features
The STGP10NC60KD is an N-channel power MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: 600V, making it suitable for high-voltage circuits.
2. Current Rating: Continuous drain current of 10A, allowing for significant power handling.
3. RDS(on): Low on-resistance (typically 0.8 Ω), which enhances efficiency by reducing conduction losses.
4. Gate Threshold Voltage: Low gate threshold voltage (2-4V), enabling easier drive requirements.
5. Fast Switching: Designed for high-speed switching applications, improving performance in power conversion.
6. Thermal Resistance: Good thermal performance, with a junction-to-case thermal resistance of 0.5 °C/W, aiding in heat dissipation.
7. Package: Available in TO-220 package, facilitating heat sinking and assembly.
These features make the STGP10NC60KD ideal for industrial applications, power supplies, and motor control circuits.
1. Voltage Rating: 600V, making it suitable for high-voltage circuits.
2. Current Rating: Continuous drain current of 10A, allowing for significant power handling.
3. RDS(on): Low on-resistance (typically 0.8 Ω), which enhances efficiency by reducing conduction losses.
4. Gate Threshold Voltage: Low gate threshold voltage (2-4V), enabling easier drive requirements.
5. Fast Switching: Designed for high-speed switching applications, improving performance in power conversion.
6. Thermal Resistance: Good thermal performance, with a junction-to-case thermal resistance of 0.5 °C/W, aiding in heat dissipation.
7. Package: Available in TO-220 package, facilitating heat sinking and assembly.
These features make the STGP10NC60KD ideal for industrial applications, power supplies, and motor control circuits.
Pinout
The STGP10NC60KD is a power MOSFET from STMicroelectronics, featuring a total of 3 pins. The pin configuration is as follows:
1. Gate (G) - This pin controls the MOSFET's operation, allowing it to turn on or off when a voltage is applied.
2. Drain (D) - This pin is where the current flows out when the MOSFET is in the 'on' state. It connects to the load or the positive side of the power supply.
3. Source (S) - This pin is connected to ground or the negative side of the power supply, serving as the return path for the current.
The STGP10NC60KD is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 10A. It is often used in power conversion applications, such as switch-mode power supplies and inverters.
1. Gate (G) - This pin controls the MOSFET's operation, allowing it to turn on or off when a voltage is applied.
2. Drain (D) - This pin is where the current flows out when the MOSFET is in the 'on' state. It connects to the load or the positive side of the power supply.
3. Source (S) - This pin is connected to ground or the negative side of the power supply, serving as the return path for the current.
The STGP10NC60KD is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 10A. It is often used in power conversion applications, such as switch-mode power supplies and inverters.
Manufacturer
The STGP10NC60KD is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for its expertise in a variety of sectors, including automotive, industrial, personal electronics, and communication. Founded in 1987 through the merger of Italian and French companies, it has become one of the world's leading suppliers of semiconductor solutions. The company focuses on innovation and sustainability, providing products such as microcontrollers, power management ICs, and sensors, which are integral to various applications in today’s technology-driven world. STMicroelectronics has a strong commitment to research and development, driving advancements in areas like IoT (Internet of Things), smart mobility, and energy efficiency.
Application
The STGP10NC60KD is a high-voltage N-channel MOSFET primarily used in applications like power supplies, motor control, and switching converters. Its features make it suitable for use in industrial equipment, photovoltaic systems, and electric vehicles. The device is designed for high-efficiency, low-loss switching, making it ideal for inverter applications and renewable energy systems. Additionally, it can be found in various consumer electronics where efficient power management is essential.
Package
The STGP10NC60KD is packaged in a TO-220 format, which is a commonly used package for power transistors. This package type allows for effective heat dissipation and is suitable for various applications in power electronics.
