STFW8N120K5

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STFW8N120K5

+Nomenclature

MOSFET N-CH 1200V 6A TO3PF

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  • Pièce fabricant #STFW8N120K5

  • Fiche technique STFW8N120K5 DataSheet

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Spécifications

Attribut Valeur
Supplier STMicroelectronics
Package / Case Tube
Series MDmesh™ K5
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain(Id) @ 25°C 6A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 2Ohm @ 2.5A, 10V
Vgs(th)(Max) @ Id 5V @ 100µA
Gate Charge(Qg)(Max) @ Vgs 13.7 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 505 pF @ 100 V
Power Dissipation (Max) 48W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PF

Présentation

Description

STW8N120K5 is a high‑voltage N‑channel power MOSFET from STMicroelectronics, built with ST’s trench MOSFET technology and offered in the K5 (TO‑220–style) package for easy heatsinking. It’s intended for switching power electronics such as switch‑mode supplies, DC‑DC converters, motor drives, and inverters.
Key points:
- Vds ≈ 120 V; continuous drain current around 8 A (ratings depend on package, temperature, and cooling)
- Gate drive usually around 10 V for full enhancement; threshold typically 2–4 V
- Designed for fast switching with rugged avalanche energy response
- Requires proper heatsinking and gate‑drive circuitry; operate within the device’s safe operating area (SOA)
Note: exact numbers (Rds(on), Id max, thermal resistance, etc.) depend on the specific package variant and operating conditions. If you meant STW8N120K5, check the official datasheet for the precise specifications.

Features

STW8N120K5 is a high-voltage N-channel IGBT from STMicroelectronics. Key features typically include:
- 1200 V blocking voltage
- About 8 A continuous collector current
- Fast-switching operation with low saturation voltage for efficiency
- High dv/dt/di/dt immunity for rugged switching
- Avalanche ruggedness suitable for inductive-load protection
- Gate-drive compatibility with standard IGBT drives (typical drive around 15 V)
- Suitable for high-voltage switching applications such as switch-mode power supplies, motor drives, and inverters
Note: exact numeric specs (Vce(sat), switching times, packaging, safe operating area, etc.) can vary by lot and packaging. Please refer to the official datasheet for precise details.

Pinout

3 pins (G, D, S) with the drain tab. It is an N-channel enhancement-mode power MOSFET used for high-voltage switching.

Manufacturer

STMicroelectronics (ST) is the manufacturer. It is a multinational electronics and semiconductor company that designs and produces integrated circuits and discrete semiconductors (including power MOSFETs). It is headquartered in Geneva, Switzerland, with global operations and is publicly traded on Euronext Paris and Borsa Italiana.

Application

STW8N120K5 is a high‑voltage N‑channel MOSFET (≈1200 V, ≈8 A). Common application areas include:
- Offline switching power supplies (SMPS) and PFC stages
- DC‑DC converters in high‑voltage power electronics
- Inverters and solar/wuel UPS power stages
- Motor drives and induction motor controllers
- Battery chargers and welding equipment
- Any high‑voltage switching application in industrial equipment and power adapters

Package

D²PAK (TO-263) surface-mount package.