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STF13N65M2
+NomenclatureMOSFET N-CH 650V 10A TO220FP
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FabricantSemi - conducteurs optiques
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Pièce fabricant #STF13N65M2
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En stock3736
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Spécifications
| Attribut | Valeur |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ M2 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 10A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 430mOhm @ 5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 17 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 590 pF @ 100 V |
| PowerDissipation(Max) | 25W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
Présentation
Description
STF13N65M2 is STMicroelectronics’ high‑voltage N‑channel power MOSFET (STripFET family), designed for switching power supplies and other high‑voltage circuitry. Key points:
- Ratings: VDS ≈ 650 V; ID ≈ 13 A (values can vary with temperature and packaging). Gate threshold ~2–4 V.
- Electricals: RDS(on) typically in the low ohm to a couple ohms range at VGS ≈ 10 V (exact figure depends on temp and package).
- Package options: available in common power packages (e.g., TO‑220AB, D²PAK/DPAK), with suitable heatsinking.
- Features: fast switching capability with rugged avalanche energy performance, suitable for offline converters, motor drives, and inverters.
- How to use: drive the gate with about 10–12 V for conduction, provide proper heat sinking, and consult the datasheet for SOA, thermal characteristics, and pinout.
- Note: check the exact datasheet for current/thermal limits and package revision, as figures can vary by lot and temperature.
If you need, I can summarize the specific datasheet values you’re working with.
- Ratings: VDS ≈ 650 V; ID ≈ 13 A (values can vary with temperature and packaging). Gate threshold ~2–4 V.
- Electricals: RDS(on) typically in the low ohm to a couple ohms range at VGS ≈ 10 V (exact figure depends on temp and package).
- Package options: available in common power packages (e.g., TO‑220AB, D²PAK/DPAK), with suitable heatsinking.
- Features: fast switching capability with rugged avalanche energy performance, suitable for offline converters, motor drives, and inverters.
- How to use: drive the gate with about 10–12 V for conduction, provide proper heat sinking, and consult the datasheet for SOA, thermal characteristics, and pinout.
- Note: check the exact datasheet for current/thermal limits and package revision, as figures can vary by lot and temperature.
If you need, I can summarize the specific datasheet values you’re working with.
Equivalent
STF13N65M2 is a 650 V N-channel MOSFET (≈13 A). Cross-references depend on package and Rds(on). Please confirm package type (TO-220, D²PAK, etc.) and target Rds(on) or Id. With that, I can give exact equivalents from Infineon, Vishay, ON Semiconductor, etc.
Features
ST STF13N65M2 is a 650 V, 13 A N-channel IGBT from STMicroelectronics (STF family). Key features:
- Blocking voltage: 650 V; continuous collector current: ~13 A
- Trench-gate IGBT for low Vce(sat) and fast switching
- Fast switching performance for SMPS, inverters, motor drives
- High dv/dt tolerance and rugged short-circuit capability
- Gate drive: typically 15 V (Vge); threshold ~3–5 V
- Avalanche ruggedness and solid thermal performance
- RoHS compliant; available in multiple packages
Typical applications: power supplies, motor control, inverters, solar power systems. For exact electrical characteristics, switching times, Safe Operating Area, and packaging options, consult the datasheet.
- Blocking voltage: 650 V; continuous collector current: ~13 A
- Trench-gate IGBT for low Vce(sat) and fast switching
- Fast switching performance for SMPS, inverters, motor drives
- High dv/dt tolerance and rugged short-circuit capability
- Gate drive: typically 15 V (Vge); threshold ~3–5 V
- Avalanche ruggedness and solid thermal performance
- RoHS compliant; available in multiple packages
Typical applications: power supplies, motor control, inverters, solar power systems. For exact electrical characteristics, switching times, Safe Operating Area, and packaging options, consult the datasheet.
Pinout
- Pin count: 3 pins (G, C, E) plus the metal tab.
- Function: 650 V N-channel high-power switch (IGBT) or similar N‑channel device; pinout typically: pin 1 = Gate, pin 2 = Collector (tab connected to Collector), pin 3 = Emitter.
- Function: 650 V N-channel high-power switch (IGBT) or similar N‑channel device; pinout typically: pin 1 = Gate, pin 2 = Collector (tab connected to Collector), pin 3 = Emitter.
Manufacturer
- Manufacturer: STMicroelectronics (ST)
- What kind of company: A multinational semiconductor company that designs, develops, and manufactures integrated circuits, discretes, and power devices for automotive, industrial, and consumer electronics.
- What kind of company: A multinational semiconductor company that designs, develops, and manufactures integrated circuits, discretes, and power devices for automotive, industrial, and consumer electronics.
Application
STF13N65M2 is a high-voltage N-channel MOSFET (650 V) used in switching power electronics. Typical applications include:
- Offline AC–DC switch-mode supplies (PFC, flyback/forward)
- DC–DC converters for telecom/industrial equipment
- Solar inverters and other renewable-energy power stages
- Motor/servo drives and general inverter systems
- Uninterruptible power supplies (UPS) and battery chargers
It suits high-voltage, fast-switching topologies requiring rugged avalanche energy and good dv/dt. Also used in inverter sections of welding equipment and induction heaters where 650 V devices are appropriate.
- Offline AC–DC switch-mode supplies (PFC, flyback/forward)
- DC–DC converters for telecom/industrial equipment
- Solar inverters and other renewable-energy power stages
- Motor/servo drives and general inverter systems
- Uninterruptible power supplies (UPS) and battery chargers
It suits high-voltage, fast-switching topologies requiring rugged avalanche energy and good dv/dt. Also used in inverter sections of welding equipment and induction heaters where 650 V devices are appropriate.
Package
TO-220AB (through-hole) package.
