STE145N65M5

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STE145N65M5

+Nomenclature

MOSFET N-CH 650V 143A ISOTOP

  • FabricantSemi - conducteurs optiques

  • Pièce fabricant #STE145N65M5

  • En stock9102

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Spécifications

Attribut Valeur
Supplier STMicroelectronics
Package Tube
Series MDmesh™ V
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 143A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 15mOhm @ 69A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 414 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 18500 pF @ 100 V
PowerDissipation(Max) 679W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Chassis Mount
SupplierDevicePackage ISOTOP®

Présentation

Description

STE145N65M5 isn’t a public STMicroelectronics part number I can locate. It may be a misspelling or a variant (e.g., STN65N65M5, STN65NF65M5, or STW65N65M5). Here’s a concise intro if it’s a 650 V N‑channel MOSFET from ST:
- Type: N‑channel enhancement‑mode power MOSFET used as a high‑voltage switch in SMPS, PFC, inverters, and motor drives.
- Ratings: designed for around 650 V, with current ratings in tens of amperes; typically low Rds(on) (mΩ to tens of mΩ depending on grade); rugged avalanche energy and solid SOA.
- Features: fast switching, reasonable gate charge, robust body diode; common packages include D²PAK, DPAK, TO‑220.
- Use: driven from an appropriate gate drive (often around 10 V; some variants are logic‑level).
What to do next: search STMicroelectronics’ catalog for the exact part, confirm the correct suffix/packaging, and review the datasheet for Vds, Id, Rds(on), gate charge, and thermal specs. If you have the exact link or alternate part number, I can pull precise details.

Features

STE145N65M5 is a 650 V N-channel power MOSFET. Key features (typical):
- 650 V blocking voltage, N-channel enhancement mode
- Trench MOSFET structure for improved conduction and switching
- Gate drive compatibility with standard Vgs (low to moderate gate charge)
- Fast switching capability with low gate drive energy
- Avalanche-rated for inductive-load switching; robust energy handling
- Built-in body diode with reliable reverse recovery
- RoHS-compliant packaging options (e.g., D²PAK / TO-263 or TO-220 variants)
- Wide operating temperature range suitable for industrial/SMPS use
- Applications: offline and switch-mode power supplies, DC-DC converters, motor drives
Note: Exact Rds(on), current rating, and package variants depend on the specific device grade. Refer to the datasheet for precise electrical characteristics and limits.

Pinout

Pin count: 3 leads (Gate, Drain, Source). Function: N-channel enhancement-mode power MOSFET used for high-voltage switching; the drain is typically tied to the tab/heat sink in most packages.

Manufacturer

- Manufacturer: STMicroelectronics (ST).
- What kind of company: A global, European-origin semiconductor company (multinational corporation) that designs, manufactures, and sells integrated circuits and discrete semiconductors (including power MOSFETs, IGBTs, microcontrollers, sensors) for automotive, industrial, and consumer markets; headquartered in Geneva, Switzerland.

Application

STE145N65M5 is a high-voltage, high-speed 650 V N‑channel power MOSFET. Typical applications include:
- Offline switch‑mode power supplies (SMPS) and power‑factor correction (PFC)
- Motor drives and controls (BLDC/PMSM, pumps, fans)
- Solar inverters, battery chargers and energy‑storage inverters
- Uninterruptible power supplies (UPS) and telecom/industrial power electronics
- High‑voltage DC‑DC converters and other switching stages in AC mains environments

Package

STE145N65M5 is a high-voltage N-channel MOSFET. The package varies by vendor (through-hole TO-220/TO-220AB or surface-mount DPAK/ D²PAK). For the exact package, check the specific datasheet.

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