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STD8NM50N
+NomenclatureMOSFET N-CH 500V 5A DPAK
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FabricantSemi - conducteurs optiques
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Pièce fabricant #STD8NM50N
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En stock2010
365 Garantie qualité 24h/24
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Spécifications
| Attribut | Valeur |
| Series | MDmesh™ II |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 5A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 790mOhm @ 2.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 14 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 364 pF @ 50 V |
| PowerDissipation(Max) | 45W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
| Package/Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| BaseProductNumber | STD8NM50 |
Présentation
Description
STD8NM50N is a high-performance, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. This component is characterized by its ability to handle high voltage and current levels efficiently, making it suitable for power management and switching applications.
Key features typically include a low on-resistance, fast switching speeds, and high thermal stability, allowing for enhanced energy efficiency and reliability in circuits. The STD8NM50N is often used in power supplies, motor drivers, and other high-power applications where efficient control of electrical energy is crucial.
When utilizing this MOSFET, it's essential to consider its maximum ratings, including gate-source voltage, drain-source voltage, and continuous drain current, to ensure optimal performance and prevent damage. Overall, the STD8NM50N is a valuable component in modern electronic design, offering versatility and efficiency for engineers and developers.
Key features typically include a low on-resistance, fast switching speeds, and high thermal stability, allowing for enhanced energy efficiency and reliability in circuits. The STD8NM50N is often used in power supplies, motor drivers, and other high-power applications where efficient control of electrical energy is crucial.
When utilizing this MOSFET, it's essential to consider its maximum ratings, including gate-source voltage, drain-source voltage, and continuous drain current, to ensure optimal performance and prevent damage. Overall, the STD8NM50N is a valuable component in modern electronic design, offering versatility and efficiency for engineers and developers.
Equivalent
The STD8NM50N is a N-channel MOSFET with a 500V rating and 8A current handling. Equivalent alternatives include the STP8NM50, IRF840, and MTP8N50E. When selecting an equivalent, ensure similar voltage, current ratings, and Rds(on) specifications to maintain performance. Always verify data sheets for specific applications to ensure compatibility.
Features
The STD8NM50N is a high-performance N-channel MOSFET known for its robust specifications and reliability in various applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, suitable for high-voltage applications.
2. Current Handling: It can handle a continuous drain current (I_D) of up to 8A, making it effective for medium-power tasks.
3. Low On-Resistance: With a low R_DS(on) typically around 0.8 ohms, it minimizes power loss and heat generation during operation.
4. Fast Switching Speed: Its fast switching capabilities make it ideal for applications in switching power supplies and motor controls.
5. Thermal Performance: It has a maximum junction temperature of 150°C, ensuring reliability under thermal stress.
6. Package Type: Typically available in TO-220, it provides ease of heat dissipation and mounting.
Overall, the STD8NM50N is suitable for applications in power management, automotive systems, and industrial equipment, offering efficiency and performance.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, suitable for high-voltage applications.
2. Current Handling: It can handle a continuous drain current (I_D) of up to 8A, making it effective for medium-power tasks.
3. Low On-Resistance: With a low R_DS(on) typically around 0.8 ohms, it minimizes power loss and heat generation during operation.
4. Fast Switching Speed: Its fast switching capabilities make it ideal for applications in switching power supplies and motor controls.
5. Thermal Performance: It has a maximum junction temperature of 150°C, ensuring reliability under thermal stress.
6. Package Type: Typically available in TO-220, it provides ease of heat dissipation and mounting.
Overall, the STD8NM50N is suitable for applications in power management, automotive systems, and industrial equipment, offering efficiency and performance.
Pinout
The STD8NM50N is an N-channel MOSFET from STMicroelectronics with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is the input connected to the ground or the lower potential side of the circuit.
The STD8NM50N is designed for high-voltage applications and has a maximum drain-source voltage (V_DS) of 500V, with a continuous drain current (I_D) of up to 8A. Its low on-resistance ensures efficient operation in power management applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is the input connected to the ground or the lower potential side of the circuit.
The STD8NM50N is designed for high-voltage applications and has a maximum drain-source voltage (V_DS) of 500V, with a continuous drain current (I_D) of up to 8A. Its low on-resistance ensures efficient operation in power management applications.
Manufacturer
The STD8NM50N is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of electronic components, including integrated circuits, discrete devices, and sensors. Founded in 1987 through the merger of two companies, it operates in various sectors such as automotive, industrial, personal electronics, and communication equipment. The company is known for its innovation in semiconductor technology and aims to provide solutions that drive energy efficiency and sustainability. STMicroelectronics is headquartered in Switzerland and has a significant global presence, with manufacturing facilities, research and development centers, and sales offices worldwide.
Application
The STD8NM50N is a N-channel power MOSFET primarily used in applications such as power conversion, switching power supplies, and motor control. Its high voltage rating (500V) and low on-resistance make it suitable for high-efficiency designs in industrial and consumer electronics. Common applications include:
1. Power inverters for renewable energy systems.
2. High-voltage switching circuits.
3. UPS systems (Uninterruptible Power Supplies).
4. Electric vehicles and hybrid systems.
5. Lighting control systems.
6. DC-DC converters.
These applications leverage its ability to handle high voltages and currents efficiently.
1. Power inverters for renewable energy systems.
2. High-voltage switching circuits.
3. UPS systems (Uninterruptible Power Supplies).
4. Electric vehicles and hybrid systems.
5. Lighting control systems.
6. DC-DC converters.
These applications leverage its ability to handle high voltages and currents efficiently.
Package
The STD8NM50N is typically offered in a TO-220 package type. This package provides good thermal performance and is suitable for various applications in power electronics.
