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STD3NK90ZT4
+NomenclatureMOSFET N-CH 900V 3A DPAK
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FabricantSemi - conducteurs optiques
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Pièce fabricant #STD3NK90ZT4
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Fiche technique STD3NK90ZT4 DataSheet
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Package TO-252-3
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En stock2524
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 900 V |
| Current-ContinuousDrain(Id)@25°C | 3A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.8Ohm @ 1.5A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 22.7 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 590 pF @ 25 V |
| PowerDissipation(Max) | 90W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252 (D-Pak) |
Présentation
Description
Key specifications of the STD3NK90ZT4 include a drain-source voltage (V_DS) of 900V, a drain current (I_D) of 3A, and a low gate charge, which reduces the power required to drive the MOSFET. The component is typically housed in a TO-220 package, providing a compact yet durable solution for electronic circuit designs. Its high voltage capacity makes it particularly useful for applications such as power supplies, DC-DC converters, and motor drivers.
Equivalent
1. IRF840 by Infineon Technologies
2. FQA9N90C by ON Semiconductor
3. 2SK3568 by Toshiba
These equivalents may vary slightly in specifications, so it's important to verify the electrical characteristics and package compatibility for your specific application.
Features
1. Voltage Rating: It has a high breakdown voltage, typically around 900V, which makes it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current of up to 3A.
3. Low On-Resistance: It features a low R_DS(on), which minimizes power loss and enhances efficiency.
4. Fast Switching: The device is designed for fast switching, reducing switching losses and improving performance in power conversion applications.
5. Gate Charge: It has a low gate charge, which reduces the driving power requirements.
6. Package: The MOSFET is available in a TO-252 (DPAK) package, suitable for surface-mount technology.
7. Operating Temperature: It supports a wide operating temperature range, making it reliable for various environmental conditions.
These features make the STD3NK90ZT4 suitable for applications such as power supplies, converters, and other high-voltage circuits.
Pinout
1. Gate (G): Used to control the MOSFET. Applying a voltage to this pin switches the device on or off.
2. Drain (D): The pin where current flows out from, connected to the load.
3. Source (S): The pin where current flows into, typically connected to ground.
Additionally, the tab or heat sink of the package is usually connected to the drain. The STD3NK90ZT4 is designed for high-voltage, fast-switching applications and can handle a maximum drain-source voltage (V_ds) of 900V and a continuous drain current (I_d) of 2.7A. It is often used in applications such as power conversion, switching regulators, and motor control.
Manufacturer
Application
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Control: Suitable for controlling motors in industrial and automotive applications due to its high-speed switching capabilities.
3. Lighting Systems: Employed in driving circuits for LED and other lighting technologies.
4. Telecommunications: Utilized in equipment requiring reliable high-frequency switching.
5. Consumer Electronics: Used in power management and signal processing applications.
Its robust design and efficiency make it ideal for environments requiring high power density and reliability.