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STD3NK80Z-1
+NomenclatureMOSFET N-CH 800V 2.5A IPAK
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FabricantSemi - conducteurs optiques
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Pièce fabricant #STD3NK80Z-1
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Fiche technique STD3NK80Z-1 DataSheet
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En stock12360
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Spécifications
| Attribut | Valeur |
| Series | SuperMESH™ |
| Part Status | Active |
| Base Product Number | STD3NK80 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.5Ohm @ 1.25A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 485 pF @ 25 V |
| Power Dissipation (Max) | 70W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-251 (IPAK) |
| Package | TO-251-3 Short Leads, IPAK, TO-251AA |
| Packaging | Tube |
Présentation
Description
The STD3NK80Z-1 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification purposes. Manufactured by STMicroelectronics, it is designed for high-efficiency and high-speed switching applications. Key features of the STD3NK80Z-1 include a maximum drain-source voltage (V_DSS) of 800V and a continuous drain current (I_D) of up to 3A at 25°C.
This MOSFET is built using ST's advanced strip technology, providing low on-state resistance, which enhances its efficiency by minimizing power losses during operation. The STD3NK80Z-1 is encapsulated in a TO-252 package, making it suitable for surface mounting, which is advantageous for compact circuit designs.
Typical applications include power converters, motor control, and various power management functions in industrial and consumer electronics. Its robustness and reliability are enhanced by built-in protection features like avalanche ruggedness and fast body diode performance, ensuring stable operation under rigorous conditions.
This MOSFET is built using ST's advanced strip technology, providing low on-state resistance, which enhances its efficiency by minimizing power losses during operation. The STD3NK80Z-1 is encapsulated in a TO-252 package, making it suitable for surface mounting, which is advantageous for compact circuit designs.
Typical applications include power converters, motor control, and various power management functions in industrial and consumer electronics. Its robustness and reliability are enhanced by built-in protection features like avalanche ruggedness and fast body diode performance, ensuring stable operation under rigorous conditions.
Equivalent
The STD3NK80Z-1 is an N-channel MOSFET with specific characteristics. Equivalent products with similar specifications include:
1. IRF840 (from Infineon Technologies)
2. STP8NK80Z (from STMicroelectronics)
3. FQPF8N80C (from ON Semiconductor)
Always check datasheets for exact match, as variations in parameters like voltage, current, and package type may exist.
1. IRF840 (from Infineon Technologies)
2. STP8NK80Z (from STMicroelectronics)
3. FQPF8N80C (from ON Semiconductor)
Always check datasheets for exact match, as variations in parameters like voltage, current, and package type may exist.
Features
The STD3NK80Z-1 is an N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for high-efficiency power switching applications. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 3A, making it suitable for high-voltage applications.
2. R_DS(on): The device features a low on-resistance, typically around 3.6 ohms, which reduces power loss during operation.
3. Speed: It offers fast switching capabilities, which is beneficial for applications that require quick transitions from on to off states and vice versa.
4. Package: It is typically available in a TO-252 package, which is a surface-mount design suitable for compact circuit layouts.
5. Temperature Range: The MOSFET can operate within a wide temperature range, enhancing its reliability in various environments.
6. Protection Features: Includes avalanche ruggedness, providing resistance to voltage spike damages.
The STD3NK80Z-1 is often used in applications like power supplies, converters, and other circuits requiring efficient power management.
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 3A, making it suitable for high-voltage applications.
2. R_DS(on): The device features a low on-resistance, typically around 3.6 ohms, which reduces power loss during operation.
3. Speed: It offers fast switching capabilities, which is beneficial for applications that require quick transitions from on to off states and vice versa.
4. Package: It is typically available in a TO-252 package, which is a surface-mount design suitable for compact circuit layouts.
5. Temperature Range: The MOSFET can operate within a wide temperature range, enhancing its reliability in various environments.
6. Protection Features: Includes avalanche ruggedness, providing resistance to voltage spike damages.
The STD3NK80Z-1 is often used in applications like power supplies, converters, and other circuits requiring efficient power management.
Pinout
The STD3NK80Z-1 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) typically used for switching applications. This component comes in a DPAK (TO-252) package, which features three pins.
1. Pin 1 (Gate): This pin is where the voltage is applied to control the MOSFET's operation. By applying a voltage to the gate, the device can be turned on, allowing current to flow between the drain and source.
2. Pin 2 (Drain): This pin is connected to the load. When the MOSFET is turned on, current flows from the drain to the source.
3. Pin 3 (Source): This pin is connected to the ground or the negative side of the power supply. It serves as the reference point for the current flowing through the MOSFET.
The MOSFET is designed for high voltage and high-speed switching applications, making it suitable for power supplies and motor control circuits.
1. Pin 1 (Gate): This pin is where the voltage is applied to control the MOSFET's operation. By applying a voltage to the gate, the device can be turned on, allowing current to flow between the drain and source.
2. Pin 2 (Drain): This pin is connected to the load. When the MOSFET is turned on, current flows from the drain to the source.
3. Pin 3 (Source): This pin is connected to the ground or the negative side of the power supply. It serves as the reference point for the current flowing through the MOSFET.
The MOSFET is designed for high voltage and high-speed switching applications, making it suitable for power supplies and motor control circuits.
Manufacturer
The STD3NK80Z-1 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. These products are used in various application sectors, including automotive, industrial, personal electronics, computers, and communication equipment. As a leader in the semiconductor industry, STMicroelectronics is known for its innovation and comprehensive product portfolio that includes microcontrollers, sensors, power management devices, and other advanced technologies.
Application
The STD3NK80Z-1 is an N-channel MOSFET commonly used in applications where high efficiency and fast switching are required. It is suitable for use in power management systems, such as DC-DC converters and power supply units, due to its low on-resistance and high voltage capability. Additionally, it is employed in motor control circuits, lighting systems, and automotive applications. Its robustness and reliability make it ideal for industries requiring durable electronic components, including consumer electronics and industrial automation.
Package
The STD3NK80Z-1 is a MOSFET transistor that comes in a DPAK (TO-252) package. This type of package is commonly used for surface-mount applications, offering a compact size suitable for efficient thermal performance on printed circuit boards.
